Optical & Electronic Properties

• Semiconductor nanostructures

III-V and IV-IV systems

• Quantum wells (GaAs/AlGaAs, InGaAs/GaAs, InGaAs/InP)
• Self-assembled quantum dots (InAs/GaAs, InP/GaAs, InP/InGaP, InGaAs/GaAs, and Ge/Si) [Appl. Phys. Lett. 81, 2743 (2002), Phys. Rev. B 73, 033309 (2006), Nanotechnology 22, 065703 (2011) ]
• Free-standing quantum wires (InAs and InP) [ Nanotechnology 23, 375704 (20012), Phy. Phys.B 82, 125327 (2010) ]

Some topics

• Wave function localization on type-I versus type-II band alignement
• Formation of exciton complexes (bi-excitons and trions)
• Carrier dynamics [Phys. Rev. B65, 115336 (2002) ]
• Interface localization
• Noise measurements
• Disorder effect in low dimensional systems
• Imaging of wave functions
• Valence band mixing effects  [ Phys. Rev. B64, 153301 (2001), Rev. of Sci. Inst. 75, 1947 (2004), Phys. Stat. Solids, 1, 547 (2004) ]

• Spin-related effects
  • Spin injection
  • Spin-filter tunneling
  • Spin dynamics and transport
  • Semiconductor-magnetic materials (GaMnAs, and EuPbTe)  [ Appl. Phys. Lett. 85, 2250 (2004), Phys. Rev. Lett. 95, 77203 (2005), Phys. Rev. B 71, 45319 (2005), Appl. Phys. Lett. 88, 151906 (2006) ]
  • Coupling between carriers and magnetic atoms

• New Materials
  • Nitrides semiconductors [ Solid State Commun. 125, (3-4) 205-208 (2003), J. of Crystal Growth, 252, 208-212 (2003),  Microelectronis Journal 252, 208-212 (2004), Physical Review B, 68, 155204 (2003), J. of Crystal Growth 284 379–387 (2005), Semicond. Sci. Technol. 21, 846-851 (2006).]
  • Organic semiconductors