{"id":393,"date":"2022-12-14T12:40:45","date_gmt":"2022-12-14T12:40:45","guid":{"rendered":"https:\/\/sites.ifi.unicamp.br\/lpcm\/?p=393"},"modified":"2022-12-14T12:40:45","modified_gmt":"2022-12-14T12:40:45","slug":"new-publication-in-journal-of-physical-chemistry-c-by-group-member","status":"publish","type":"post","link":"https:\/\/sites.ifi.unicamp.br\/lpcm\/2022\/12\/14\/new-publication-in-journal-of-physical-chemistry-c-by-group-member\/","title":{"rendered":"New publication in \u201cJournal of Physical Chemistry C\u201d by group member"},"content":{"rendered":"

Strain Tuning in Graded SiGe on Insulator: Interplay between Local Concentration and Nonmonotonic Lattice Evolution after Ge Condensation<\/strong><\/p>\n

\"\"<\/a><\/p>\n

Germanium condensation has proven to be a reliable route for obtaining smoothly graded composition SiGe layers with good reproducibility and reduced defect density. The process is known as a crucial tool to induce well-defined strain on Si or SiGe layers with potential use in semiconductor devices. In this work, we show that starting from a low concentration Si0.92Ge0.08 layer grown on top of a crystalline Si(001) on SOI substrates, we can reach desirable concentration with a nonmonotonic interplay on in-plane and out-of-plane strain. The Ge concentration is evaluated by a combination of ultralow energy secondary ion mass spectroscopy (ULE-SIMS) and synchrotron X-ray measurements (diffraction and reflectivity). After the evaluation of Ge content, the strain-sensitive process of rolling up tubes from the flat layers is used and combined with X-ray diffraction to provide a concise scenario of the strain evolution along an in-growth oxidation series, pointing out the conditions that maximize strain, as well as its fading, as the Ge content rises.<\/p>\n

Gilberto Rodrigues-Junior, Francesca Cavallo, Christoph Deneke, and Angelo Malachias<\/p>\n

J. Phys. Chem. C 2022, xxxxx<\/p>\n

DOI: 10.1021\/acs.jpcc.2c05702<\/p>\n","protected":false},"excerpt":{"rendered":"

Strain Tuning in Graded SiGe on Insulator: Interplay between Local Concentration and Nonmonotonic Lattice Evolution after Ge Condensation Germanium condensation has proven to be a reliable route for obtaining smoothly graded composition SiGe layers with good reproducibility and reduced defect density. The process is known as a crucial tool to induce well-defined strain on Si … <\/p>\n

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