61.
Souza, Mario C M M; Barea, Luis A M; Vallini, Felipe; Rezende, Guilherme F M; Wiederhecker, Gustavo S; Frateschi, Newton C
Low-power four-channel wavelength multicasting in embedded microring resonators Proceedings Article
In: 2014 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), IEEE, 345 E 47TH ST, NEW YORK, NY 10017 USA, 2014, ISSN: 2160-9020, (Conference on Lasers and Electro-Optics (CLEO), San Jose, CA, JUN 08-13, 2014).
@inproceedings{ISI:000369908603369,
title = {Low-power four-channel wavelength multicasting in embedded microring
resonators},
author = {Mario C M M Souza and Luis A M Barea and Felipe Vallini and Guilherme F M Rezende and Gustavo S Wiederhecker and Newton C Frateschi},
issn = {2160-9020},
year = {2014},
date = {2014-01-01},
booktitle = {2014 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)},
publisher = {IEEE},
address = {345 E 47TH ST, NEW YORK, NY 10017 USA},
series = {Conference on Lasers and Electro-Optics},
abstract = {We demonstrate four-channel all-optical wavelength multicasting using
only 1 mW of pump power and channel spacing of 40-60 GHz. Our device is
based on a compact embedded microring design fabricated on a scalable
SOI platform.},
note = {Conference on Lasers and Electro-Optics (CLEO), San Jose, CA, JUN 08-13,
2014},
keywords = {},
pubstate = {published},
tppubtype = {inproceedings}
}
We demonstrate four-channel all-optical wavelength multicasting using
only 1 mW of pump power and channel spacing of 40-60 GHz. Our device is
based on a compact embedded microring design fabricated on a scalable
SOI platform.
only 1 mW of pump power and channel spacing of 40-60 GHz. Our device is
based on a compact embedded microring design fabricated on a scalable
SOI platform.
62.
Vallini, Felipe; Gu, Qing; Kats, Michael; Fainman, Yeshaiahu; Frateschi, Newton C.
Carrier saturation in multiple quantum well metallo-dielectric semiconductor nanolaser: Is bulk material a better choice for gain media? Journal Article
In: Optics Express, vol. 21, no. 22, pp. 25985, 2013, ISSN: 1094-4087.
@article{vallini_carrier_2013,
title = {Carrier saturation in multiple quantum well metallo-dielectric semiconductor nanolaser: Is bulk material a better choice for gain media?},
author = {Vallini, Felipe and Gu, Qing and Kats, Michael and Fainman, Yeshaiahu and Frateschi, Newton C.},
url = {http://www.opticsinfobase.org/oe/fulltext.cfm?uri=oe-21-22-25985&id=269975},
issn = {1094-4087},
year = {2013},
date = {2013-01-01},
urldate = {2014-05-14},
journal = {Optics Express},
volume = {21},
number = {22},
pages = {25985},
abstract = {Although multi quantum well (MQW) structure is frequently
suggested as the appropriate medium for providing optical gain in
nanolasers with low threshold current, we demonstrate that in general bulk
gain medium can be a better choice. We show that the high threshold gain
required for nanolasers demands high threshold carrier concentrations and
therefore a highly degenerate condition in which the barriers between the
quantum wells are heavily pumped. As a result, there occurs spontaneous
emission from the barrier in very dissipative low Q modes or undesired
confined higher Q modes with resonance wavelengths close to the barrier
bandgap. This results in a competition between wells and barriers that
suppresses lasing. A complete model involving the optical properties of the
resonant cavity combined with the carrier injection in the multilayer
structure is presented to support our argument. With this theoretical model
we show that while lasing is achieved in the nanolaser with bulk gain
media, the nanolaser with MQW gain structure exhibits well emission
saturation due to the onset of barrier emission.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Although multi quantum well (MQW) structure is frequently
suggested as the appropriate medium for providing optical gain in
nanolasers with low threshold current, we demonstrate that in general bulk
gain medium can be a better choice. We show that the high threshold gain
required for nanolasers demands high threshold carrier concentrations and
therefore a highly degenerate condition in which the barriers between the
quantum wells are heavily pumped. As a result, there occurs spontaneous
emission from the barrier in very dissipative low Q modes or undesired
confined higher Q modes with resonance wavelengths close to the barrier
bandgap. This results in a competition between wells and barriers that
suppresses lasing. A complete model involving the optical properties of the
resonant cavity combined with the carrier injection in the multilayer
structure is presented to support our argument. With this theoretical model
we show that while lasing is achieved in the nanolaser with bulk gain
media, the nanolaser with MQW gain structure exhibits well emission
saturation due to the onset of barrier emission.
suggested as the appropriate medium for providing optical gain in
nanolasers with low threshold current, we demonstrate that in general bulk
gain medium can be a better choice. We show that the high threshold gain
required for nanolasers demands high threshold carrier concentrations and
therefore a highly degenerate condition in which the barriers between the
quantum wells are heavily pumped. As a result, there occurs spontaneous
emission from the barrier in very dissipative low Q modes or undesired
confined higher Q modes with resonance wavelengths close to the barrier
bandgap. This results in a competition between wells and barriers that
suppresses lasing. A complete model involving the optical properties of the
resonant cavity combined with the carrier injection in the multilayer
structure is presented to support our argument. With this theoretical model
we show that while lasing is achieved in the nanolaser with bulk gain
media, the nanolaser with MQW gain structure exhibits well emission
saturation due to the onset of barrier emission.
63.
Malheiros-Silveira, Gilliard N.; Wiederhecker, Gustavo S.; Hern'andez-Figueroa, Hugo E.
Dielectric resonator antenna for applications in nanophotonics Journal Article
In: Optics Express, vol. 21, no. 1, pp. 1234–1239, 2013.
@article{malheiros-silveira_dielectric_2013,
title = {Dielectric resonator antenna for applications in nanophotonics},
author = {Malheiros-Silveira, Gilliard N. and Wiederhecker, Gustavo S. and Hern{'a}ndez-Figueroa, Hugo E.},
url = {http://www.opticsexpress.org/abstract.cfm?URI=oe-21-1-1234},
year = {2013},
date = {2013-01-01},
urldate = {2014-05-14},
journal = {Optics Express},
volume = {21},
number = {1},
pages = {1234--1239},
abstract = {Optical nanoantennas, especially of the dipole type, have been theoretically and experimentally demonstrated by many research groups. Likewise, the plasmonic waveguides and optical circuits have experienced significant advances. In radio frequencies and microwaves a category of antenna known as dielectric resonator antenna (DRA), whose radiant element is a dielectric resonator (DR), has been designed for several applications, including satellite and radar systems. In this letter, we explore the possibilities and advantages to design nano DRAs (NDRAs), i. e., DRAs for nanophotonics applications. Numerical demonstrations showing the fundamental antenna parameters for a circular cylindrical NDRA type have been carried out for the short (S), conventional (C), and long (L) bands of the optical communication spectrum.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Optical nanoantennas, especially of the dipole type, have been theoretically and experimentally demonstrated by many research groups. Likewise, the plasmonic waveguides and optical circuits have experienced significant advances. In radio frequencies and microwaves a category of antenna known as dielectric resonator antenna (DRA), whose radiant element is a dielectric resonator (DR), has been designed for several applications, including satellite and radar systems. In this letter, we explore the possibilities and advantages to design nano DRAs (NDRAs), i. e., DRAs for nanophotonics applications. Numerical demonstrations showing the fundamental antenna parameters for a circular cylindrical NDRA type have been carried out for the short (S), conventional (C), and long (L) bands of the optical communication spectrum.
64.
Gu, Qing; Wingad, B.; Vallini, F.; Slutsky, B.; Katz, M.; Nezhad, M. P.; Frateschi, N. C.; Fainman, Y.
Electrically pumped metallo-dielectric pedestal nanolasers Conference
2013 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013.
@conference{gu_electrically_2013,
title = {Electrically pumped metallo-dielectric pedestal nanolasers},
author = {Gu, Qing and Wingad, B. and Vallini, F. and Slutsky, B. and Katz, M. and Nezhad, M.P. and Frateschi, N.C. and Fainman, Y.},
url = {https://sites.ifi.unicamp.br/lpd/files/2014/10/Gu-et-al.-2013-Electrically-pumped-metallo-dielectric-pedestal-na1.pdf},
year = {2013},
date = {2013-01-01},
booktitle = {2013 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR)},
pages = {1--2},
abstract = {Electrically pumped metallo-dielectric nanolasers are demonstrated. Employing a two-step InP chemical etching, we obtain straight pedestal sidewalls and preferentially reduce the diameter of the n-doped InP cladding more than the p-doped one for optimized performance.},
keywords = {},
pubstate = {published},
tppubtype = {conference}
}
Electrically pumped metallo-dielectric nanolasers are demonstrated. Employing a two-step InP chemical etching, we obtain straight pedestal sidewalls and preferentially reduce the diameter of the n-doped InP cladding more than the p-doped one for optimized performance.
65.
Zhang, Mian; Luiz, Gustavo O.; Shah, Shreyas; Nussenzveig, Paulo A.; Wiederhecker, Gustavo S.; Lipson, Michal
Eliminating Structural Loss in Optomechanical Resonators Using Elastic Wave Interference Conference
CLEO: 2013, OSA Technical Digest (online) Optical Society of America, 2013.
@conference{zhang_eliminating_2013,
title = {Eliminating Structural Loss in Optomechanical Resonators Using Elastic Wave Interference},
author = {Zhang, Mian and Luiz, Gustavo O. and Shah, Shreyas and Nussenzveig, Paulo A. and Wiederhecker, Gustavo S. and Lipson, Michal},
url = {http://www.opticsinfobase.org/abstract.cfm?URI=CLEO_SI-2013-CW1F.6},
year = {2013},
date = {2013-01-01},
urldate = {2014-05-14},
booktitle = {CLEO: 2013},
pages = {CW1F.6},
publisher = {Optical Society of America},
series = {OSA Technical Digest (online)},
abstract = {We theoretically and experimentally demonstrate that the support loss of double-disk optomechanical resonators can be minimized using destructive elastic wave interference. We show 100MHz Si3N4 resonators with mechanical quality factor of 10000 at room temperature.},
keywords = {},
pubstate = {published},
tppubtype = {conference}
}
We theoretically and experimentally demonstrate that the support loss of double-disk optomechanical resonators can be minimized using destructive elastic wave interference. We show 100MHz Si3N4 resonators with mechanical quality factor of 10000 at room temperature.
66.
Alberto Mijam Barea, Luis; Vallini, Felipe; P. Mayer Alegre, Thiago; S. Wiederhecker, Gustavo; Cesario Frateschi, Newton
Enhanced Q with Internally Coupled Microring Resonators Conference
CLEO: 2013, Optical Society of America, 2013.
@conference{alberto_mijam_barea_enhanced_2013,
title = {Enhanced Q with Internally Coupled Microring Resonators},
author = {Alberto Mijam Barea, Luis and Vallini, Felipe and P. Mayer Alegre, Thiago and S. Wiederhecker, Gustavo and Cesario Frateschi, Newton},
url = {http://www.opticsinfobase.org/abstract.cfm?URI=CLEO_AT-2013-JTu4A.42},
year = {2013},
date = {2013-01-01},
urldate = {2014-05-14},
booktitle = {CLEO: 2013},
pages = {JTu4A.42},
publisher = {Optical Society of America},
abstract = {We demonstrate fourfold quality factor (Q) enhancement with microring resonators internally coupled to larger microring resonator. Q textasciitilde 37,000 is obtained for a 5 μm radius microring in a 40 μm x 40 μm footprint device.},
keywords = {},
pubstate = {published},
tppubtype = {conference}
}
We demonstrate fourfold quality factor (Q) enhancement with microring resonators internally coupled to larger microring resonator. Q textasciitilde 37,000 is obtained for a 5 μm radius microring in a 40 μm x 40 μm footprint device.
67.
Jarschel, P. F.; Barea, L. A. M.; Souza, M. C. M. M.; Vallini, F.; Von Zuben, A. A. G.; Ramos, A. C.; Merlo, R. B.; Frateschi, N. C.
Erbium Doped Al2O3 films for integrated III #x2013;V photonics Conference
2013 Symposium on Microelectronics Technology and Devices (SBMicro), 2013.
@conference{jarschel_erbium_2013,
title = {Erbium Doped Al2O3 films for integrated III #x2013;V photonics},
author = {Jarschel, P.F. and Barea, L.A.M. and Souza, M.C.M.M. and Vallini, F. and Von Zuben, A.A.G. and Ramos, A.C. and Merlo, R.B. and Frateschi, N.C.},
url = {https://sites.ifi.unicamp.br/lpd/files/2014/10/Jarschel-et-al.-2013-Erbium-Doped-Al2O3-films-for-integrated-III-x2013.pdf},
year = {2013},
date = {2013-01-01},
booktitle = {2013 Symposium on Microelectronics Technology and Devices (SBMicro)},
pages = {1--4},
abstract = {We describe the fabrication optimization of Er-doped Al2O3 films for III-V integrated photonics. Smooth and thick films, with high refractive index and Erbium emission in the C-band spectrum (1530 nm to 1565 nm) are obtained using the co-sputtering technique. Thermal annealing at 850 $,^circ$C is shown to provide the highest Photoluminescence intensity of the films. However, the onset of crystallization leads to large fluctuation in refractive index. We also show that the annealing at temperatures larger than 600 $,^circ$C causes well intermixing in the laser structure. Therefore, local annealing and/or a reduction in annealing temperature may be required. Alumina waveguides are fabricated by the same technique, but the process have to be improved, as optical losses are very high.},
keywords = {},
pubstate = {published},
tppubtype = {conference}
}
We describe the fabrication optimization of Er-doped Al2O3 films for III-V integrated photonics. Smooth and thick films, with high refractive index and Erbium emission in the C-band spectrum (1530 nm to 1565 nm) are obtained using the co-sputtering technique. Thermal annealing at 850 $,^circ$C is shown to provide the highest Photoluminescence intensity of the films. However, the onset of crystallization leads to large fluctuation in refractive index. We also show that the annealing at temperatures larger than 600 $,^circ$C causes well intermixing in the laser structure. Therefore, local annealing and/or a reduction in annealing temperature may be required. Alumina waveguides are fabricated by the same technique, but the process have to be improved, as optical losses are very high.
68.
Vallini, Felipe; Frateschi, Newton Cesario
2013.
@phdthesis{vallini_nanolasers_2013,
title = {Nanolasers de semicondutor met'alico-diel'etrico com bombeio eletr^onico : a influ^encia do meio de ganho},
author = {Vallini, Felipe and Frateschi, Newton Cesario},
url = {http://www.bibliotecadigital.unicamp.br/document/?code=000917601&opt=1},
year = {2013},
date = {2013-01-01},
urldate = {2014-05-14},
abstract = {Resumo: Neste trabalho s~ao investigados os nanolasers de semicondutor do tipo met'alico-diel'etrico com injec c~ao eletr^onica. Com o uso de softwares robustos otimizamos as propriedades eletromagn'eticas das cavidades propostas atrav'es da soluc c~ao das equac c~oes de Maxwell em um meio material. Tamb'em resolvemos auto-consistentemente as equac c~oes de Poisson, de continuidade, de transporte e de Schroedinger para obter as propriedades eletr^onicas da cavidade. Tal otimizac c~ao, considerando a parte de confinamento do modo em conjunto com a parte da injec c~ao eletr^onica nunca havia sido proposta ou realizada para nanolasers. Estudamos o efeito do meio de ganho em um nanolaser desse tipo atrav'es da comparac c~ao do desempenho de um nanolaser com meio de ganho bulk e outro com meio de ganho de m'ultiplos poc cos qu^anticos. Essa an'alise foi feita inserindo um modelo de reservat'orio de portadores `as equac c~oes de taxa convencionais para nanolasers. Fabricamos dois nanolasers, um com cada meio de ganho. Os nanolasers foram caracterizados e demonstramos que um meio de ganho bulk 'e mais adequado ao desenvolvimento de nanolasers de semicondutor met'alico-diel'etrico com bombeio eletr^onico. Por fim, medimos um nanolaser com meio de ganho bulk a 77 K, o qual apresentou uma corrente de limiar da ordem de 2 mA, emiss~ao em 1567 nm e largura de linha de 0.4 nm.
Abstract: In this work we have investigated metallo-dielectric semiconductor nanolasers with electronic pumping. We have optimized the electromagnetic properties of the proposed cavities through the solution of Maxwell equations in a material media using robust software. We also solved self-consistently Poisson, continuity, transport and Schrodinger equations to obtain the electronic properties of the cavities. Such optimization, which considers the optical mode confinement together with the electronic injection, had not been proposed or realized for nanolasers yet. We have studied the effect of the gain media in this class of nanolaser comparing the performance of a nanolaser with bulk gain media and a nanolaser with multiple quantum wells gain media. This analysis was done inserting a reservoir model for carriers into conventional laser rate equations. We have fabricated two nanolasers, each one with one of the proposed gain media. The nanolasers were measured and we demonstrated that a bulk gain media is more suitable for the development of metallo-dielectric semiconductor nanolasers with electronic pumping. Finally, we have measured a bulk gain media nanolaser at 77 K, with a threshold current of 2 mA, emission at 1567 nm and a linewidth of 0.4 nm.},
keywords = {},
pubstate = {published},
tppubtype = {phdthesis}
}
Resumo: Neste trabalho s~ao investigados os nanolasers de semicondutor do tipo met'alico-diel'etrico com injec c~ao eletr^onica. Com o uso de softwares robustos otimizamos as propriedades eletromagn'eticas das cavidades propostas atrav'es da soluc c~ao das equac c~oes de Maxwell em um meio material. Tamb'em resolvemos auto-consistentemente as equac c~oes de Poisson, de continuidade, de transporte e de Schroedinger para obter as propriedades eletr^onicas da cavidade. Tal otimizac c~ao, considerando a parte de confinamento do modo em conjunto com a parte da injec c~ao eletr^onica nunca havia sido proposta ou realizada para nanolasers. Estudamos o efeito do meio de ganho em um nanolaser desse tipo atrav'es da comparac c~ao do desempenho de um nanolaser com meio de ganho bulk e outro com meio de ganho de m'ultiplos poc cos qu^anticos. Essa an'alise foi feita inserindo um modelo de reservat'orio de portadores `as equac c~oes de taxa convencionais para nanolasers. Fabricamos dois nanolasers, um com cada meio de ganho. Os nanolasers foram caracterizados e demonstramos que um meio de ganho bulk 'e mais adequado ao desenvolvimento de nanolasers de semicondutor met'alico-diel'etrico com bombeio eletr^onico. Por fim, medimos um nanolaser com meio de ganho bulk a 77 K, o qual apresentou uma corrente de limiar da ordem de 2 mA, emiss~ao em 1567 nm e largura de linha de 0.4 nm.
Abstract: In this work we have investigated metallo-dielectric semiconductor nanolasers with electronic pumping. We have optimized the electromagnetic properties of the proposed cavities through the solution of Maxwell equations in a material media using robust software. We also solved self-consistently Poisson, continuity, transport and Schrodinger equations to obtain the electronic properties of the cavities. Such optimization, which considers the optical mode confinement together with the electronic injection, had not been proposed or realized for nanolasers yet. We have studied the effect of the gain media in this class of nanolaser comparing the performance of a nanolaser with bulk gain media and a nanolaser with multiple quantum wells gain media. This analysis was done inserting a reservoir model for carriers into conventional laser rate equations. We have fabricated two nanolasers, each one with one of the proposed gain media. The nanolasers were measured and we demonstrated that a bulk gain media is more suitable for the development of metallo-dielectric semiconductor nanolasers with electronic pumping. Finally, we have measured a bulk gain media nanolaser at 77 K, with a threshold current of 2 mA, emission at 1567 nm and a linewidth of 0.4 nm.
Abstract: In this work we have investigated metallo-dielectric semiconductor nanolasers with electronic pumping. We have optimized the electromagnetic properties of the proposed cavities through the solution of Maxwell equations in a material media using robust software. We also solved self-consistently Poisson, continuity, transport and Schrodinger equations to obtain the electronic properties of the cavities. Such optimization, which considers the optical mode confinement together with the electronic injection, had not been proposed or realized for nanolasers yet. We have studied the effect of the gain media in this class of nanolaser comparing the performance of a nanolaser with bulk gain media and a nanolaser with multiple quantum wells gain media. This analysis was done inserting a reservoir model for carriers into conventional laser rate equations. We have fabricated two nanolasers, each one with one of the proposed gain media. The nanolasers were measured and we demonstrated that a bulk gain media is more suitable for the development of metallo-dielectric semiconductor nanolasers with electronic pumping. Finally, we have measured a bulk gain media nanolaser at 77 K, with a threshold current of 2 mA, emission at 1567 nm and a linewidth of 0.4 nm.
69.
Gu, Qing; Slutsky, Boris; Vallini, Felipe; Smalley, Joseph S. T.; Nezhad, Maziar P.; Frateschi, Newton C.; Fainman, Yeshaiahu
Purcell effect in sub-wavelength semiconductor lasers Journal Article
In: Optics Express, vol. 21, no. 13, pp. 15603–15617, 2013.
@article{gu_purcell_2013,
title = {Purcell effect in sub-wavelength semiconductor lasers},
author = {Gu, Qing and Slutsky, Boris and Vallini, Felipe and Smalley, Joseph S. T. and Nezhad, Maziar P. and Frateschi, Newton C. and Fainman, Yeshaiahu},
url = {http://www.opticsexpress.org/abstract.cfm?URI=oe-21-13-15603},
year = {2013},
date = {2013-01-01},
urldate = {2014-05-14},
journal = {Optics Express},
volume = {21},
number = {13},
pages = {15603--15617},
abstract = {We present a formal treatment of the modification of spontaneous emission rate by a cavity (Purcell effect) in sub-wavelength semiconductor lasers. To explicitly express the assumptions upon which our formalism builds, we summarize the results of non-relativistic quantum electrodynamics (QED) and the emitter-field-reservoir model in the quantum theory of damping. Within this model, the emitter-field interaction is modified to the extent that the field mode is modified by its environment. We show that the Purcell factor expressions frequently encountered in the literature are recovered only in the hypothetical condition when the gain medium is replaced by a transparent medium. Further, we argue that to accurately evaluate the Purcell effect, both the passive cavity boundary and the collective effect of all emitters must be included as part of the mode environment.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
We present a formal treatment of the modification of spontaneous emission rate by a cavity (Purcell effect) in sub-wavelength semiconductor lasers. To explicitly express the assumptions upon which our formalism builds, we summarize the results of non-relativistic quantum electrodynamics (QED) and the emitter-field-reservoir model in the quantum theory of damping. Within this model, the emitter-field interaction is modified to the extent that the field mode is modified by its environment. We show that the Purcell factor expressions frequently encountered in the literature are recovered only in the hypothetical condition when the gain medium is replaced by a transparent medium. Further, we argue that to accurately evaluate the Purcell effect, both the passive cavity boundary and the collective effect of all emitters must be included as part of the mode environment.
70.
Barea, Luis A. M.; Vallini, Felipe; Jarschel, Paulo F.; Frateschi, Newton C.
Silicon technology compatible photonic molecules for compact optical signal processing Journal Article
In: Applied Physics Letters, vol. 103, no. 20, pp. 201102, 2013, ISSN: 0003-6951, 1077-3118.
@article{barea_silicon_2013,
title = {Silicon technology compatible photonic molecules for compact optical signal processing},
author = {Barea, Luis A. M. and Vallini, Felipe and Jarschel, Paulo F. and Frateschi, Newton C.},
url = {http://scitation.aip.org/content/aip/journal/apl/103/20/10.1063/1.4829743},
issn = {0003-6951, 1077-3118},
year = {2013},
date = {2013-01-01},
urldate = {2014-05-14},
journal = {Applied Physics Letters},
volume = {103},
number = {20},
pages = {201102},
abstract = {Photonic molecules (PMs) based on multiple inner coupled microring resonators allow to surpass the fundamental constraint between the total quality factor (QT), free spectral range (FSR), and resonator size. In this work, we use a PM that presents doublets and triplets resonance splitting, all with high QT. We demonstrate the use of the doublet splitting for 34.2 GHz signal extraction by filtering the sidebands of a modulated optical signal. We also demonstrate that very compact optical modulators operating 2.75 times beyond its resonator linewidth limit may be obtained using the PM triplet splitting, with separation of ∼55 GHz.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Photonic molecules (PMs) based on multiple inner coupled microring resonators allow to surpass the fundamental constraint between the total quality factor (QT), free spectral range (FSR), and resonator size. In this work, we use a PM that presents doublets and triplets resonance splitting, all with high QT. We demonstrate the use of the doublet splitting for 34.2 GHz signal extraction by filtering the sidebands of a modulated optical signal. We also demonstrate that very compact optical modulators operating 2.75 times beyond its resonator linewidth limit may be obtained using the PM triplet splitting, with separation of ∼55 GHz.
71.
Barea, L. A. M.; Vallini, F.; de Rezende, G. F. M.; Frateschi, N. C.
Spectral Engineering With CMOS Compatible SOI Photonic Molecules Journal Article
In: IEEE Photonics Journal, vol. 5, no. 6, pp. 2202717–2202717, 2013, ISSN: 1943-0655.
@article{barea_spectral_2013,
title = {Spectral Engineering With CMOS Compatible SOI Photonic Molecules},
author = {Barea, L.A.M. and Vallini, F. and de Rezende, G.F.M. and Frateschi, N.C.},
url = {https://sites.ifi.unicamp.br/lpd/files/2014/10/Barea-et-al.-2013-Spectral-Engineering-With-CMOS-Compatible-SOI-Phot.pdf},
issn = {1943-0655},
year = {2013},
date = {2013-01-01},
journal = {IEEE Photonics Journal},
volume = {5},
number = {6},
pages = {2202717--2202717},
abstract = {Photonic systems based on microring resonators have a fundamental constraint given by the strict relationship among free spectral range, total quality factor QT , and resonator size, intrinsically making filter spacing, photonic lifetime, and footprint interdependent. Here, we break this paradigm employing CMOS-compatible silicon-on-insulator photonic molecules based on coupled multiple inner ring resonators. The resonance wavelengths and their respective linewidths are controlled by the hybridization of the quasi-orthogonal photonic states. We demonstrate photonic molecules with doublet and triplet resonances with spectral splitting only achievable with single-ring orders of magnitude larger in footprint. In addition, this splitting is potentially controllable based on the coupling (bonds) between resonators. Finally, the spatial distribution of the hybrid states allows up to sevenfold QT enhancement.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Photonic systems based on microring resonators have a fundamental constraint given by the strict relationship among free spectral range, total quality factor QT , and resonator size, intrinsically making filter spacing, photonic lifetime, and footprint interdependent. Here, we break this paradigm employing CMOS-compatible silicon-on-insulator photonic molecules based on coupled multiple inner ring resonators. The resonance wavelengths and their respective linewidths are controlled by the hybridization of the quasi-orthogonal photonic states. We demonstrate photonic molecules with doublet and triplet resonances with spectral splitting only achievable with single-ring orders of magnitude larger in footprint. In addition, this splitting is potentially controllable based on the coupling (bonds) between resonators. Finally, the spatial distribution of the hybrid states allows up to sevenfold QT enhancement.
72.
Zhang, Mian; Barnard, Arthur; Wiederhecker, Gustavo S.; McEuen, Paul L.; Lipson, Michal
Strong Interaction between a Single Carbon Nanotube and an Optical Microresonator Conference
CLEO: 2013, OSA Technical Digest (online) Optical Society of America, 2013.
@conference{zhang_strong_2013,
title = {Strong Interaction between a Single Carbon Nanotube and an Optical Microresonator},
author = {Zhang, Mian and Barnard, Arthur and Wiederhecker, Gustavo S. and McEuen, Paul L. and Lipson, Michal},
url = {http://www.opticsinfobase.org/abstract.cfm?URI=CLEO_QELS-2013-QM1B.1},
year = {2013},
date = {2013-01-01},
urldate = {2014-05-14},
booktitle = {CLEO: 2013},
pages = {QM1B.1},
publisher = {Optical Society of America},
series = {OSA Technical Digest (online)},
abstract = {We couple a single suspended carbon nanotube to the near field of a free standing optical microdisk. The strong interaction between the nanotube and the microcavity produces an ultrahigh photocurrent response as large as 0.35mA/W.},
keywords = {},
pubstate = {published},
tppubtype = {conference}
}
We couple a single suspended carbon nanotube to the near field of a free standing optical microdisk. The strong interaction between the nanotube and the microcavity produces an ultrahigh photocurrent response as large as 0.35mA/W.
73.
Jiang, Cheng; Liu, Hongxiang; Cui, Yuanshun; Li, Xiaowei; Chen, Guibin; Chen, Bin
Electromagnetically induced transparency and slow light in two-mode optomechanics Journal Article
In: Optics Express, vol. 21, no. 10, pp. 12165–12173, 2013.
@article{jiang_electromagnetically_2013,
title = {Electromagnetically induced transparency and slow light in two-mode optomechanics},
author = {Jiang, Cheng and Liu, Hongxiang and Cui, Yuanshun and Li, Xiaowei and Chen, Guibin and Chen, Bin},
url = {http://www.opticsexpress.org/abstract.cfm?URI=oe-21-10-12165},
year = {2013},
date = {2013-01-01},
urldate = {2014-05-14},
journal = {Optics Express},
volume = {21},
number = {10},
pages = {12165--12173},
abstract = {We theoretically demonstrate the mechanically mediated electromagnetically induced transparency in a two-mode cavity optomechanical system, where two cavity modes are coupled to a common mechanical resonator. When the two cavity modes are driven on their respective red sidebands by two pump beams, a transparency window appears in the probe transmission spectrum due to destructive interference. Under this situation the transmitted probe beam can be delayed as much as 4 μs, which can be easily controlled by the power of the pump beams.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
We theoretically demonstrate the mechanically mediated electromagnetically induced transparency in a two-mode cavity optomechanical system, where two cavity modes are coupled to a common mechanical resonator. When the two cavity modes are driven on their respective red sidebands by two pump beams, a transparency window appears in the probe transmission spectrum due to destructive interference. Under this situation the transmitted probe beam can be delayed as much as 4 μs, which can be easily controlled by the power of the pump beams.
74.
Highly luminescent a-SiO x〈ER〉/SiO 2/Si multilayer structure Journal Article
In: vol. 4, 2012.
@article{lang_highly_2012,
title = {Highly luminescent a-SiO x〈ER〉/SiO 2/Si multilayer structure},
url = {https://sites.ifi.unicamp.br/lpd/files/2014/10/06215006.pdf},
year = {2012},
date = {2012-08-01},
volume = {4},
abstract = {We have fabricated highly luminescent samples with erbium-doped amorphous silicon suboxide (a-SiO x 〈Er〉) layers on SiO 2/Si substrates. The layers are designed to provide a resonance with large modal overlap with the active material and with low quality factor (Q-factor) at 1540 nm. Also, the structure has higher Q-factor resonances in the wavelength range between 800 and 1000 nm. Within this range, strong light emission from a-SiO x defect-related radiative centers and emission from the Er 3+ 4I 11/2 - 4I 15/2 optical transition (980 nm) are observed. A twofold and fourfold improvement in photoluminescence (PL) intensity are achieved in the wavelength ranges between 800 and 1000 nm and between 1500 and 1600 nm (region of Er 3+ 4I 13/2 - 4I 15/2 transition), respectively, when compared to the a-SiO x 〈Er〉 active material deposited directly on Si substrate. The latter higher PL intensity enhancement is apparently caused by optical pumping at 980 nm (higher Q-factor) with subsequent emission from the 4I 15/2 level in the low Q-factor resonance at 1540 nm. Further, five times increase of this emission at 1540 nm is obtained after optimized temperature annealing. The temperature-induced quenching in the PL intensity indicates distinct deactivation energies related to different types of Er centers which are more or less coupled to defects depending on the thermal treatment temperature copyright 2009-2012 IEEE.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
We have fabricated highly luminescent samples with erbium-doped amorphous silicon suboxide (a-SiO x 〈Er〉) layers on SiO 2/Si substrates. The layers are designed to provide a resonance with large modal overlap with the active material and with low quality factor (Q-factor) at 1540 nm. Also, the structure has higher Q-factor resonances in the wavelength range between 800 and 1000 nm. Within this range, strong light emission from a-SiO x defect-related radiative centers and emission from the Er 3+ 4I 11/2 - 4I 15/2 optical transition (980 nm) are observed. A twofold and fourfold improvement in photoluminescence (PL) intensity are achieved in the wavelength ranges between 800 and 1000 nm and between 1500 and 1600 nm (region of Er 3+ 4I 13/2 - 4I 15/2 transition), respectively, when compared to the a-SiO x 〈Er〉 active material deposited directly on Si substrate. The latter higher PL intensity enhancement is apparently caused by optical pumping at 980 nm (higher Q-factor) with subsequent emission from the 4I 15/2 level in the low Q-factor resonance at 1540 nm. Further, five times increase of this emission at 1540 nm is obtained after optimized temperature annealing. The temperature-induced quenching in the PL intensity indicates distinct deactivation energies related to different types of Er centers which are more or less coupled to defects depending on the thermal treatment temperature copyright 2009-2012 IEEE.
75.
Figueira, David S. L.; Barea, Luis A. M.; Vallini, Felipe; Jarschel, Paulo F.; Lang, Rossano; Frateschi, Newton C.
a-SiOxtextlessErtextgreater active photonic crystal resonator membrane fabricated by focused Ga+ ion beam Journal Article
In: Optics Express, vol. 20, no. 17, pp. 18772–18783, 2012.
@article{figueira_-siox<er>_2012,
title = {a-SiOxtextlessErtextgreater active photonic crystal resonator membrane fabricated by focused Ga+ ion beam},
author = {Figueira, David S. L. and Barea, Luis A. M. and Vallini, Felipe and Jarschel, Paulo F. and Lang, Rossano and Frateschi, Newton C.},
url = {http://www.opticsexpress.org/abstract.cfm?URI=oe-20-17-18772},
year = {2012},
date = {2012-01-01},
urldate = {2014-05-14},
journal = {Optics Express},
volume = {20},
number = {17},
pages = {18772--18783},
abstract = {We have fabricated thin erbium-doped amorphous silicon sub-oxide (a-SiOxtextlessErtextgreater) photonic crystal membrane using focused gallium ion beam (FIB). The photonic crystal is composed of a hexagonal lattice with a H1 defect supporting two quasi-doubly degenerate second order dipole states. 2-D simulation was used for the design of the structure and full 3-D FDTD (Finite-Difference Time-Domain) numerical simulations were performed for a complete analysis of the structure. The simulation predicted a quality factor for the structure of Q = 350 with a spontaneous emission enhancement of 7. Micro photoluminescence measurements showed an integrated emission intensity enhancement of textasciitilde2 times with a Q = 130. We show that the discrepancy between simulation and measurement is due to the conical shape of the photonic crystal holes and the optical losses induced by FIB milling.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
We have fabricated thin erbium-doped amorphous silicon sub-oxide (a-SiOxtextlessErtextgreater) photonic crystal membrane using focused gallium ion beam (FIB). The photonic crystal is composed of a hexagonal lattice with a H1 defect supporting two quasi-doubly degenerate second order dipole states. 2-D simulation was used for the design of the structure and full 3-D FDTD (Finite-Difference Time-Domain) numerical simulations were performed for a complete analysis of the structure. The simulation predicted a quality factor for the structure of Q = 350 with a spontaneous emission enhancement of 7. Micro photoluminescence measurements showed an integrated emission intensity enhancement of textasciitilde2 times with a Q = 130. We show that the discrepancy between simulation and measurement is due to the conical shape of the photonic crystal holes and the optical losses induced by FIB milling.
76.
Menezes, J. W.; Barea, L. A M; Chillcce, E. F.; Frateschi, N.; Cescato, L.
Comparison of Plasmonic Arrays of Holes Recorded by Interference Lithography and Focused Ion Beam Journal Article
In: IEEE Photonics Journal, vol. 4, no. 2, pp. 544–551, 2012, ISSN: 1943-0655.
@article{menezes_comparison_2012,
title = {Comparison of Plasmonic Arrays of Holes Recorded by Interference Lithography and Focused Ion Beam},
author = {Menezes, J. W. and Barea, L. A M and Chillcce, E. F. and Frateschi, N. and Cescato, L.},
url = {https://sites.ifi.unicamp.br/lpd/files/2014/10/Menezes-et-al.-2012-Comparison-of-Plasmonic-Arrays-of-Holes-Recorded-b.pdf},
issn = {1943-0655},
year = {2012},
date = {2012-01-01},
journal = {IEEE Photonics Journal},
volume = {4},
number = {2},
pages = {544--551},
abstract = {In this paper, we compare the geometric characteristics and the optical properties of plasmonic hole arrays recorded in gold (Au) films using two different techniques, namely, focused ion beam (FIB) and interference lithography (IL). The morphology of the samples was analyzed using a scanning electron microscope (SEM), and the plasmonic peaks were measured from the transmission spectrum of the samples. The diameters of the holes recorded by IL present approximately the same statistical deviation as those fabricated by FIB but in a much larger area. Although the transmittance measurements of both types of samples exhibit the characteristic plasmonic peaks, the intrinsic fabrication errors of each technique affect differently the optical spectra.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
In this paper, we compare the geometric characteristics and the optical properties of plasmonic hole arrays recorded in gold (Au) films using two different techniques, namely, focused ion beam (FIB) and interference lithography (IL). The morphology of the samples was analyzed using a scanning electron microscope (SEM), and the plasmonic peaks were measured from the transmission spectrum of the samples. The diameters of the holes recorded by IL present approximately the same statistical deviation as those fabricated by FIB but in a much larger area. Although the transmittance measurements of both types of samples exhibit the characteristic plasmonic peaks, the intrinsic fabrication errors of each technique affect differently the optical spectra.
77.
Moreau, Alberto L. D.; Janissen, Richard; Santos, Clelton A.; Peroni, Luis A.; Stach-Machado, Dagmar R.; de Souza, Alessandra A.; de Souza, Anete P.; Cotta, M^onica A.
Highly-sensitive and label-free indium phosphide biosensor for early phytopathogen diagnosis Journal Article
In: Biosensors and Bioelectronics, vol. 36, no. 1, pp. 62–68, 2012, ISSN: 0956-5663.
@article{moreau_highly-sensitive_2012,
title = {Highly-sensitive and label-free indium phosphide biosensor for early phytopathogen diagnosis},
author = {Moreau, Alberto L. D. and Janissen, Richard and Santos, Clelton A. and Peroni, Luis A. and Stach-Machado, Dagmar R. and de Souza, Alessandra A. and de Souza, Anete P. and Cotta, M{^o}nica A.},
url = {http://www.sciencedirect.com/science/article/pii/S0956566312002084},
issn = {0956-5663},
year = {2012},
date = {2012-01-01},
urldate = {2014-05-14},
journal = {Biosensors and Bioelectronics},
volume = {36},
number = {1},
pages = {62--68},
abstract = {The development of highly-sensitive and label-free operating semiconductor-based, biomaterial detecting sensors has important applications in areas such as environmental science, biomedical research and medical diagnostics. In the present study, we developed an Indium Phosphide (InP) semiconductor-based resistive biosensor using the change of its electronic properties upon biomaterial adsorption as sensing element. To detect biomaterial at low concentrations, the procedure of functionalization and covalent biomolecule immobilization was also optimized to guarantee high molecule density and high reproducibility which are prerequisite for reliable results. The characterization, such as biomolecular conjugation efficiency, detection concentration limits, receptor:ligand specificity and concentration detection range was analyzed by using three different biological systems: i) synthetic dsDNA and two phytopathogenic diseases, ii) the severe CB-form of Citrus Tristeza Virus (CTV) and iii) Xylella fastidiosa, both causing great economic loss worldwide. The experimental results show a sensitivity of 1 pM for specific ssDNA detection and about 2 nM for the specific detection of surface proteins of CTV and X. fastidiosa phytopathogens. A brief comparison with other semiconductor based biosensors and other methodological approaches is discussed and confirms the high sensitivity and reproducibility of our InP based biosensor which could be suitable for reliable early infection diagnosis in environmental and life sciences.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
The development of highly-sensitive and label-free operating semiconductor-based, biomaterial detecting sensors has important applications in areas such as environmental science, biomedical research and medical diagnostics. In the present study, we developed an Indium Phosphide (InP) semiconductor-based resistive biosensor using the change of its electronic properties upon biomaterial adsorption as sensing element. To detect biomaterial at low concentrations, the procedure of functionalization and covalent biomolecule immobilization was also optimized to guarantee high molecule density and high reproducibility which are prerequisite for reliable results. The characterization, such as biomolecular conjugation efficiency, detection concentration limits, receptor:ligand specificity and concentration detection range was analyzed by using three different biological systems: i) synthetic dsDNA and two phytopathogenic diseases, ii) the severe CB-form of Citrus Tristeza Virus (CTV) and iii) Xylella fastidiosa, both causing great economic loss worldwide. The experimental results show a sensitivity of 1 pM for specific ssDNA detection and about 2 nM for the specific detection of surface proteins of CTV and X. fastidiosa phytopathogens. A brief comparison with other semiconductor based biosensors and other methodological approaches is discussed and confirms the high sensitivity and reproducibility of our InP based biosensor which could be suitable for reliable early infection diagnosis in environmental and life sciences.
78.
Safavi-Naeini, Amir H.; Chan, Jasper; Hill, Jeff T.; Alegre, Thiago P. Mayer; Krause, Alex; Painter, Oskar
Observation of Quantum Motion of a Nanomechanical Resonator Journal Article
In: Physical Review Letters, vol. 108, no. 3, pp. 033602, 2012.
@article{safavi-naeini_observation_2012,
title = {Observation of Quantum Motion of a Nanomechanical Resonator},
author = {Safavi-Naeini, Amir H. and Chan, Jasper and Hill, Jeff T. and Alegre, Thiago P. Mayer and Krause, Alex and Painter, Oskar},
url = {http://link.aps.org/doi/10.1103/PhysRevLett.108.033602},
year = {2012},
date = {2012-01-01},
urldate = {2014-05-14},
journal = {Physical Review Letters},
volume = {108},
number = {3},
pages = {033602},
abstract = {In this Letter we use resolved sideband laser cooling to cool a mesoscopic mechanical resonator to near its quantum ground state (phonon occupancy 2.6$pm$0.2), and observe the motional sidebands generated on a second probe laser. Asymmetry in the sideband amplitudes provides a direct measure of the displacement noise power associated with quantum zero-point fluctuations of the nanomechanical resonator, and allows for an intrinsic calibration of the phonon occupation number.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
In this Letter we use resolved sideband laser cooling to cool a mesoscopic mechanical resonator to near its quantum ground state (phonon occupancy 2.6$pm$0.2), and observe the motional sidebands generated on a second probe laser. Asymmetry in the sideband amplitudes provides a direct measure of the displacement noise power associated with quantum zero-point fluctuations of the nanomechanical resonator, and allows for an intrinsic calibration of the phonon occupation number.
79.
Luo, Lian-Wee; Wiederhecker, Gustavo S.; Preston, Kyle; Lipson, Michal
Power insensitive silicon microring resonators Journal Article
In: Optics Letters, vol. 37, no. 4, pp. 590–592, 2012.
@article{luo_power_2012,
title = {Power insensitive silicon microring resonators},
author = {Luo, Lian-Wee and Wiederhecker, Gustavo S. and Preston, Kyle and Lipson, Michal},
url = {http://ol.osa.org/abstract.cfm?URI=ol-37-4-590},
year = {2012},
date = {2012-01-01},
urldate = {2014-05-14},
journal = {Optics Letters},
volume = {37},
number = {4},
pages = {590--592},
abstract = {We demonstrate power insensitive silicon microring resonators without the need for active feedback control. The passive control of the resonance is achieved by utilizing the compensation of two counteracting processes, free carrier dispersion blueshift and thermo-optic redshift. In the fabricated devices, the resonant wavelength shifts less than one resonance linewidth for dropped power up to 335 μW, more than fivefold improvement in cavity energy handling capability compared to regular microrings.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
We demonstrate power insensitive silicon microring resonators without the need for active feedback control. The passive control of the resonance is achieved by utilizing the compensation of two counteracting processes, free carrier dispersion blueshift and thermo-optic redshift. In the fabricated devices, the resonant wavelength shifts less than one resonance linewidth for dropped power up to 335 μW, more than fivefold improvement in cavity energy handling capability compared to regular microrings.
80.
Fegadolli, William S.; Vargas, German; Wang, Xuan; Valini, Felipe; Barea, Luis A. M.; Oliveira, Jos'e E. B.; Frateschi, Newton; Scherer, Axel; Almeida, Vilson R.; Panepucci, Roberto R.
Reconfigurable silicon thermo-optical ring resonator switch based on Vernier effect control Journal Article
In: Optics Express, vol. 20, no. 13, pp. 14722–14733, 2012.
@article{fegadolli_reconfigurable_2012,
title = {Reconfigurable silicon thermo-optical ring resonator switch based on Vernier effect control},
author = {Fegadolli, William S. and Vargas, German and Wang, Xuan and Valini, Felipe and Barea, Luis A. M. and Oliveira, Jos{'e} E. B. and Frateschi, Newton and Scherer, Axel and Almeida, Vilson R. and Panepucci, Roberto R.},
url = {http://www.opticsexpress.org/abstract.cfm?URI=oe-20-13-14722},
year = {2012},
date = {2012-01-01},
urldate = {2014-05-14},
journal = {Optics Express},
volume = {20},
number = {13},
pages = {14722--14733},
abstract = {A proof-of-concept for a new and entirely CMOS compatible thermo-optic reconfigurable switch based on a coupled ring resonator structure is experimentally demonstrated in this paper. Preliminary results show that a single optical device is capable of combining several functionalities, such as tunable filtering, non-blocking switching and reconfigurability, in a single device with compact footprint (textasciitilde50μm x 30μm).},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
A proof-of-concept for a new and entirely CMOS compatible thermo-optic reconfigurable switch based on a coupled ring resonator structure is experimentally demonstrated in this paper. Preliminary results show that a single optical device is capable of combining several functionalities, such as tunable filtering, non-blocking switching and reconfigurability, in a single device with compact footprint (textasciitilde50μm x 30μm).
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