– Enhanced nitrogen diffusion induced by atomic attrition, Erika Ochoa, Carlos Figueroa, Thierry Czerwiec, and F. Alvarez, Appl. Phys. Lett., 88, 254109 (2006).
– Previous heat treatment inducing difference plasma nitriding behaviours in martensitic stainless steels, D. R. G. Mitcell, K. T. Short, G. A. Collins, F. Alvarez, and C. A. Figueroa, J. Vacuum Science and Technology A, accepted, (2006).
– Oxygen, hydrogen, and deuterium effects on plasma nitriding of metals alloys, C. Figueroa and F. Alvarez, . Scripta Materialia, 54, 1335-1338 (2006).
– Influence of the temperature on the steel microestruture and hardening in pulsed plasma nitrding, L. F. Zagonel, C. A. Figueroa, R. Droppa Jr., F. Alvarez, Surface and Coatings Technology, In Press (2006)
– Oxygen plasma etching of carbon nano-tubes containing nitrogen, J. J. S. Acuña, C. A. Figueroa, M.E.H. Maia da Costa, P. Paredez, C.T.M. Ribeiro, and F. Alvarez, J. of Non-Cryst. Sol., In Press (2006).
– Carbon nano-estructures containing nitrogen and hydrogen prepared by íon beam assisted deposition, P. Paredez1, M.C. Marchi, M.E.H. Maia da Costa, C. A. Figueroa, M.U. Kleinke, C.T.M. Ribeiro, J.C. Sánchez-López, T.C. Rojas, and F. Alvarez, J. of Non-Cryst. Sol., In press (2006).
– Structural modifications and corrosion behaviour of martensitic stainless steel nitrided by PI3, C. A. Figueroa, F. Alvarez, Z. Zhang, G. A. Collins, and K. T. Short, J. Vacuum Science and Technology A, 23, 693-698 (2005)
– In-situ photoemission electron spectroscopy (XPS) of plasma nitrated metal alloys, C. A. Figueroa and F. Alvarez, J. Appl. Phys., 10, 103528 (2005).
– Morphological and magnetic properties of carbon-nickel nanocomposite thin films, Fonseca FC, Ferlauto AS, Alvarez F, et al., J. of Appl. Phys, 97, (2005)
– The influence of the ion current density on plasma nitriding process, E.A. Ochoa, C.A. Figueroa and F. Alvarez, Surface and Coatings Technology, In Press (2005)
– In situ photoemission electron spectroscopy study of nitrogen ion implanted AISI-H13 steel, L.F. Zagonel, C.A. Figueroa and F. Alvare, Surface Coatings and Technology, In Press, z, (2005).
-New pathways in plasma nitriding of metal alloys, Surface Coatings and Technology, In Press, C.A. Figueroa and F. Alvarez (2005).
– Single chamber PVD/PECVD process for in situ control of the catalyst activity on carbon nanotubes growth, Surface and Coatings Technology, T.M. Minea, S. Point, A. Gohier, A. Granier, C. Godon and F. Alvarez, Surface Coating and Technology, In Press, 9 March 2005.
– Oriented Carbon nano – structures containing nitrogen obtained by ion beam assisted deposition, P. Paredez, C. A. Figueroa, L. F. Zagonel, F. R. Reichert, C. R. Ribeiro, and F. Alvarez, J. of Nanoscience and nanotechnology, 5, 179 (2005).
– Corrosion Protection of Fluorzirconate Glasses Coated by a Layer of Surface Modified Tin Oxide Nanoparticle, P. Hammer, A.P. Rizzato, F. Alvarez, R. Landers, S. H. Pulcinelli, C.V. Santilli, Thin Solid Film, 2005, aceito.
– Surface hardness increasing of iron alloys by nitrogen-deuterium ion implanting, C. A. Figueroa and F. Alvarez, J. of Applied Phys., 96, 1(2004).
– A comprehensive spectroscopic study of nitrogenated carbon nanotubes, R. Droppa Jr., C. T. M. Ribeiro, R. A. Zanatta+, M. C. dos Santos, and F. Alvarez, Phys. Rev. B, 68, 2454 (2004).
– Structural properties of amorphous carbon nitride films prepared by ion beam assisted deposition, A.S. Ferlauto, A. Champi, C.A. Figueroa, C.M.T. Ribeiro, F.C. Marques, and F. Alvarez, J. of Non Cryst. Sol.,338, 486 (2004).
– . Structural properties of amorphous carbon nitride films prepared by ion beam assisted deposition, A. S. Ferlauto, A. Champi, C. A. Figueroa, C. T. M. Ribeiro, F. C. Marques and F. Alvarez, J. of Non-Cryst. Sol., 338, 486-489 (2004)
– Proceedings of the 20th International Conference on Amorphous and MicrocrystallineSemiconductors, J.of Non-Cryst. Solids, Volumes 338-(340), Campos do Jordao, 24-29 August2003. Editors: I. Chambouleyron, F. Alvarez, M. Stutzmann, P.C. Taylor and F.C. Marques, 15 June 2004.
– .Comprehensive spectroscopic study of nitrogenated carbon nanotubes, R. Droppa, CTM Ribeiro, AR Zanatta , M;.C. dos Santos, and F. Alvarez , Phys. Rev. B 69 (4): Art. No. 045405 JAN 2004
– .Pressure-induced physical changes of noble gases implanted in highly stressed amorphous carbon films, R.G. Lacerda, M.C. dos Santos, L.R. Tessler, P. Hammer, F. Alvarez, and F. Marques, Phys. Rev. B, 68, 054104 (2003).
– Influence of the ion mean free-path and the role of oxygen in nitriding processes, C. A. Figueroa, E. Ochoa, and F. Alvarez, J. Appl. Phys. 2003, p 2242-2247 AUG 15 (2003)
– Identification of the mechanism-limiting nitrogen diffusion in metallic alloys by in situ photoemission electron spectroscopy, CA Figueroa, AS Ferlauto , F. Alvarez , J APPL PHYS 94 (8): 5435-5437 OCT 15 2003
-. Processo de Modificação de superficies metálicas por plasma de nitrogênio e deutério (Patent) , Fernando Alvarez e Carlos Alejandro Figueroa, Instituto Nacional de Propriedade Industrial (INPI), 16-10-03, as 10:27 hs, Protocolo nº 5.030.
– The Stability of small carbon-nitride heterofullerenes, D. Schultz, R. Doppa Jr., F. Alvarez, and M. C. dos Santos, Phys. Rev. Lett. 90, 015501 (2003)
-. Structural properties of aluminum-nitrogen films prepared at low temperature, A. R. Zanatta, C. T. Monteiro Ribeiro, and F. Alvarez, Appl. Phys. Lett, 81, p1005-1007 (2002).
-. Comment on ‘‘Ion-assisted pulsed laser deposition of aluminum nitride thin films, A. R. Zanattaa, M.C. Ribeiro, and F. Alvarez, J. Appl. Phys. 87, 1540, (2002).
-. Incorporation of nitrogen in carbon nanotubes, R. Droppa, P. Hammer, A.C.M. Carvalho, and F. Alvarez, J NON-CRYST SOLIDS 299, p874-879 (2002)
– X-ray photoelectron spectroscopy of amorphous AlN alloys prepared by reactive rf sputtering, C.T.M. Ribeiro, A.R. Zanatta, and F. Alvarez, J. NON-CRYST SOLIDS 299, p323-327 (2002)
– EXAFS study of noble gases implanted in highly stressed amorphous carbon films, R.G. Lacerda, L. R. Tessler, M.C. dos Santos, F. Alvarez, and F. C. Marques, J. NON-CRYST SOLIDS 299, p805-809 (2002)
– X-ray photoelectron spectroscopic study of rare-earth-doped amorphous silicon-nitrogen films, A. R. Zanatta, C. T. Monteiro Ribeiro, and F. Alvarez, Appl. Phys. Lett, 81, p1005 (2002).
– Red and Green Light Emission From Samarium–Doped Amorphous Aluminum–Nitrogen Films, C. T. Monteiro Ribeiro, F. Alvarez, and A. R. Zanatta, Advanced Materials, 14, p1154 (2002).
-Influence of the chemical Sputtering on the composition and bonding structureof carbon-nitride films, P. Hammer and F. Alvarez, Thin Solid Films, 398-399, p116-123 (2001).(Invited)
-Structural properties of hydrogenated carbon nitride films produced by ion beam assisted evaporation of the molecular precursor C4N6H4, P. Hammer, R. G. Lacerda, G. M. S. Valente, R. Droppa Jr., M. C. dos santos, and F. Alvarez, J. Appl. Phys., 89, 7852-7859 (2001).
-Influence of stress on the electron core level energies of noble gases implanted in hard amorphous carbon films, R. G. Lacerda, P. Hammer, F. Alvarez, and F. C. Marques, Diam Rel Mater 10: (3-7) p956-959 (2001)
-Hard Graphitic-like Amorphous Carbon Films with High Stress and Local Microscopic Density, R. G. Lacerda, P. Hammer, F. Alvarez, and F. C. – Marques, J. of Sci. and Vacuum Techn. 19(3) May/June, p971-975 (2001).
-Identification of structural changes in carbon-nitrogen alloys by studying the dependence of the plasmon energy on nitrogen concentration, F. Alvarez, M. C. dos Santos, and P. Hammer, Appl. Phys. Lett., 73, 24, 14 December (1998).
– Nitrogen Substitution of Carbon in Graphite: structure evolution toward molecular forms, M. C. dos Santos and F. Alvarez, Phys. Rev. B 58, 19, 13918 (1998).
– Valence band offsets of amorphous silicon-carbon (a-Si1-x Cx) on crystalline silicon and hydrogenated amorphous silicon (a-Si:H), C. Bittencouret and F. Alvarez, in Properties of amorphous silicon and its alloys, EMIS Data Review Series N0 19, IEE, The Institution of Electrical Engineers, Editor: T. Searle, England (1998). (invited)
– Electronic Structure of Hydrogenated Carbon Nitride, P. Hammer, N. M. Victoria, and F. Alvarez, J. of Vac. Sci.Technol., A 16(5), (1998).
– Infrared analysis of deutered carbon-nitrogen films obtained by dual-ion-bean-assisted deposition, F. Alvarez N. M. Victoria, P. Hammer, and M. C. dos Santos, Appl. Phys. Lett., 73, (1998).
– Hydrogen induced changes on the electronic structure of carbon-nitride films, P. Hammer, N.M. Victoria, and F. Alvarez, J. of Non-Cryst. Sol., 227-230, 645(1998).
– Comment on Monte Carlo simulations of the recombination dynamics in porous silicon, L. R. Tessler and F. Alvarez, J. Phys.: Condens. Matter, 10, 6, 1447-1448(1998).
– Electronic structure of nitrogen-carbon alloys (a-CNx) determined by photoelectron spectroscopy, S. Souto, M. Pickholz, M.C. dos Santos, and F. Alvarez, Phys. Rev. B, 57, 2536(1997).
.- The role of hydrogen in nitrogen-content diamond like (a-CNx:H) films studied by XPS spectroscopy, S. Souto and F. Alvarez, Appl. Phys. Letters, 70, 1539, (1997).
.- Chemical (dis)order in a-Si1-x Cx:H for x < 0.6, P. Rovira and F. Alvarez, Phys. Rev. B, 55, 4426(1997) .- Conductivity dependence on thickness in thin films amorphous silicon carbon alloys, R. R. Koropecki, R. D. Arce, R. H. Buitrago, C. Bittencourt and F. Alvarez, Thin Sol. Films, 295, 1(1997). .- Cathodic and Anodic Glow Discharge Silicon-Carbon Alloys (a-Si1-x Cx:H) from x=0.5 to 1: a comparative study by Photoemission (UPS) and Photoluminescence (PL), F. Alvarez, P. Rovira, M. Bormioli, S.P.A. Souto, L.R. Tessler, and S. Camargo, J. of Non-Cryst. Sol., 198 & 200, 628 (1996). - Electronis structure of amorphous germanium-nitrogen alloys: a UV photoelctron spectroscopy study, D. Comedi, A. R. Zanatta, F. Alvarez and I. Chambouleyron, J. of Non-Cryst Sol., 198 & 200, 136, 1996. - Physical Properties of Hydrogenated Amorphous Silicon and some of its Alloys, F. Alvarez and L. R. Tessler, Solid State Phenomena, Hydrogenated Amorphous Silicon, Volumes 44-46, Part 1. Guest Editor: H. Neber-Aeschbacher, p 3-24, 1995. (invited), - Nano-size structures in photoluminescencet porous silicon, O. Teshcke, F. Alvarez, L. Tessler, and M. V. Kleinke, Appl. Phys. Letters, 63, 1927, 1993. -Time resolved photoluminiscence of porous silicon: evidence for tunneling limited recombination in a band of localized states, L.R. Tessler, F. Alvarez and O. Teschke, Appl. Phys. Letters, 62, 2381, 1993.
