Jan 15
Low-Density InGaAs/AlGaAs Quantum Dots in Droplet-Etched Nanoholes Over the past two decades, epitaxial semiconductor quantum dots (QDs) have demonstrated very promising properties as sources of single and entangled photons on-demand. Among different growth methods, droplet etching epitaxy has allowed the growth of almost strain-free QDs, with low and controllable surface densities, small excitonic fine structure …
Jun 04
A new article from our collaboration with the UFV is out in Nanoscale: Lattice stability and elastic evolution of CdTe membranes fabrication using a III-V heterostructures as a substrate CdTe is a key binary compound for II-VI semiconductor systems since the precise control of its growth over different semiconductor materials of different orientations provides a …
Dec 14
Strain Tuning in Graded SiGe on Insulator: Interplay between Local Concentration and Nonmonotonic Lattice Evolution after Ge Condensation Germanium condensation has proven to be a reliable route for obtaining smoothly graded composition SiGe layers with good reproducibility and reduced defect density. The process is known as a crucial tool to induce well-defined strain on Si …
