1. | De Castro, MPP ; Von Zuben, AA ; Frateschi, NC ; Santo, LLE ; Galvao, DS ; Bettini, J; De Carvalho, MMG : Strong spatial beryllium doping selectivity on InGaP layers grown on pre-patterned GaAs substrates by chemical beam epitaxy. In: Journal of crystal growth, 266 (4), pp. 429–434, 2004. (Type: Journal Article | Abstract | Links | BibTeX) @article{de2004strong, title = {Strong spatial beryllium doping selectivity on InGaP layers grown on pre-patterned GaAs substrates by chemical beam epitaxy}, author = {De Castro, MPP and Von Zuben, AA and Frateschi, NC and Santo, LLE and Galvao, DS and Bettini, J and De Carvalho, MMG}, url = {http://www.sciencedirect.com/science/article/pii/S0022024804002829}, year = {2004}, date = {2004-01-01}, journal = {Journal of crystal growth}, volume = {266}, number = {4}, pages = {429--434}, publisher = {North-Holland}, abstract = {We present an investigation of beryllium doping selectivity in InGaP layers grown by chemical beam epitaxy on pre-patterned substrates. We observed a resistivity of 3.1×10−2 and 4.5×10−2 Ω cm for (1 1 1)A planes with the growth at 500°C and 540°C, respectively. The layers on (0 0 1) planes show a resistivity of 8.9×10−1 Ω cm with the growth at 500°C, being essentially undoped with the growth at 540°C ⋅ We show how this strong doping selectivity can be explained by Be3P2 cluster formation growth, which depends on growth temperature and planar crystalline structure.}, keywords = {}, pubstate = {published}, tppubtype = {article} } We present an investigation of beryllium doping selectivity in InGaP layers grown by chemical beam epitaxy on pre-patterned substrates. We observed a resistivity of 3.1×10−2 and 4.5×10−2 Ω cm for (1 1 1)A planes with the growth at 500°C and 540°C, respectively. The layers on (0 0 1) planes show a resistivity of 8.9×10−1 Ω cm with the growth at 500°C, being essentially undoped with the growth at 540°C ⋅ We show how this strong doping selectivity can be explained by Be3P2 cluster formation growth, which depends on growth temperature and planar crystalline structure. |
2004 |
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1. | ![]() | De Castro, MPP ; Von Zuben, AA ; Frateschi, NC ; Santo, LLE ; Galvao, DS ; Bettini, J; De Carvalho, MMG Strong spatial beryllium doping selectivity on InGaP layers grown on pre-patterned GaAs substrates by chemical beam epitaxy Journal Article Journal of crystal growth, 266 (4), pp. 429–434, 2004. Abstract | Links | BibTeX | Tags: Crystal Growth, Doping, Electronic Structure @article{de2004strong, title = {Strong spatial beryllium doping selectivity on InGaP layers grown on pre-patterned GaAs substrates by chemical beam epitaxy}, author = {De Castro, MPP and Von Zuben, AA and Frateschi, NC and Santo, LLE and Galvao, DS and Bettini, J and De Carvalho, MMG}, url = {http://www.sciencedirect.com/science/article/pii/S0022024804002829}, year = {2004}, date = {2004-01-01}, journal = {Journal of crystal growth}, volume = {266}, number = {4}, pages = {429--434}, publisher = {North-Holland}, abstract = {We present an investigation of beryllium doping selectivity in InGaP layers grown by chemical beam epitaxy on pre-patterned substrates. We observed a resistivity of 3.1×10−2 and 4.5×10−2 Ω cm for (1 1 1)A planes with the growth at 500°C and 540°C, respectively. The layers on (0 0 1) planes show a resistivity of 8.9×10−1 Ω cm with the growth at 500°C, being essentially undoped with the growth at 540°C ⋅ We show how this strong doping selectivity can be explained by Be3P2 cluster formation growth, which depends on growth temperature and planar crystalline structure.}, keywords = {Crystal Growth, Doping, Electronic Structure}, pubstate = {published}, tppubtype = {article} } We present an investigation of beryllium doping selectivity in InGaP layers grown by chemical beam epitaxy on pre-patterned substrates. We observed a resistivity of 3.1×10−2 and 4.5×10−2 Ω cm for (1 1 1)A planes with the growth at 500°C and 540°C, respectively. The layers on (0 0 1) planes show a resistivity of 8.9×10−1 Ω cm with the growth at 500°C, being essentially undoped with the growth at 540°C ⋅ We show how this strong doping selectivity can be explained by Be3P2 cluster formation growth, which depends on growth temperature and planar crystalline structure. |
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