1.
De Castro, MPP; Von Zuben, AA; Frateschi, NC; Santo, LLE; Galvao, DS; Bettini, J; De Carvalho, MMG
Strong spatial beryllium doping selectivity on InGaP layers grown on pre-patterned GaAs substrates by chemical beam epitaxy Journal Article
In: Journal of crystal growth, 266 (4), pp. 429–434, 2004.
@article{de2004strong,
title = {Strong spatial beryllium doping selectivity on InGaP layers grown on pre-patterned GaAs substrates by chemical beam epitaxy},
author = {De Castro, MPP and Von Zuben, AA and Frateschi, NC and Santo, LLE and Galvao, DS and Bettini, J and De Carvalho, MMG},
url = {http://www.sciencedirect.com/science/article/pii/S0022024804002829},
year = {2004},
date = {2004-01-01},
journal = {Journal of crystal growth},
volume = {266},
number = {4},
pages = {429--434},
publisher = {North-Holland},
abstract = {We present an investigation of beryllium doping selectivity in InGaP layers grown by chemical beam epitaxy on pre-patterned substrates. We observed a resistivity of 3.1×10−2 and 4.5×10−2 Ω cm for (1 1 1)A planes with the growth at 500°C and 540°C, respectively. The layers on (0 0 1) planes show a resistivity of 8.9×10−1 Ω cm with the growth at 500°C, being essentially undoped with the growth at 540°C ⋅ We show how this strong doping selectivity can be explained by Be3P2 cluster formation growth, which depends on growth temperature and planar crystalline structure.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
We present an investigation of beryllium doping selectivity in InGaP layers grown by chemical beam epitaxy on pre-patterned substrates. We observed a resistivity of 3.1×10−2 and 4.5×10−2 Ω cm for (1 1 1)A planes with the growth at 500°C and 540°C, respectively. The layers on (0 0 1) planes show a resistivity of 8.9×10−1 Ω cm with the growth at 500°C, being essentially undoped with the growth at 540°C ⋅ We show how this strong doping selectivity can be explained by Be3P2 cluster formation growth, which depends on growth temperature and planar crystalline structure.
2004
1.
De Castro, MPP; Von Zuben, AA; Frateschi, NC; Santo, LLE; Galvao, DS; Bettini, J; De Carvalho, MMG
Strong spatial beryllium doping selectivity on InGaP layers grown on pre-patterned GaAs substrates by chemical beam epitaxy Journal Article
In: Journal of crystal growth, 266 (4), pp. 429–434, 2004.
Abstract | Links | BibTeX | Tags: Crystal Growth, Doping, Electronic Structure
@article{de2004strong,
title = {Strong spatial beryllium doping selectivity on InGaP layers grown on pre-patterned GaAs substrates by chemical beam epitaxy},
author = {De Castro, MPP and Von Zuben, AA and Frateschi, NC and Santo, LLE and Galvao, DS and Bettini, J and De Carvalho, MMG},
url = {http://www.sciencedirect.com/science/article/pii/S0022024804002829},
year = {2004},
date = {2004-01-01},
journal = {Journal of crystal growth},
volume = {266},
number = {4},
pages = {429--434},
publisher = {North-Holland},
abstract = {We present an investigation of beryllium doping selectivity in InGaP layers grown by chemical beam epitaxy on pre-patterned substrates. We observed a resistivity of 3.1×10−2 and 4.5×10−2 Ω cm for (1 1 1)A planes with the growth at 500°C and 540°C, respectively. The layers on (0 0 1) planes show a resistivity of 8.9×10−1 Ω cm with the growth at 500°C, being essentially undoped with the growth at 540°C ⋅ We show how this strong doping selectivity can be explained by Be3P2 cluster formation growth, which depends on growth temperature and planar crystalline structure.},
keywords = {Crystal Growth, Doping, Electronic Structure},
pubstate = {published},
tppubtype = {article}
}
We present an investigation of beryllium doping selectivity in InGaP layers grown by chemical beam epitaxy on pre-patterned substrates. We observed a resistivity of 3.1×10−2 and 4.5×10−2 Ω cm for (1 1 1)A planes with the growth at 500°C and 540°C, respectively. The layers on (0 0 1) planes show a resistivity of 8.9×10−1 Ω cm with the growth at 500°C, being essentially undoped with the growth at 540°C ⋅ We show how this strong doping selectivity can be explained by Be3P2 cluster formation growth, which depends on growth temperature and planar crystalline structure.
http://scholar.google.com/citations?hl=en&user=95SvbM8AAAAJ
