Our regular FAPESP project “III-V heterostructures for advanced devices in quantum information and photonics” was approved. Starting from the 1. July, we will start implementing the activities.
Inside the pŕoject, we plan to use completely released III-V membrane virtual substrates made by the release of initial heterostructures to fabricate unstrained InGaAs quantum dots. Furthermore, we plan to fabricate and characterize plasmonic-photonic hybrid devices. These structures will include rolled-up tubes to form optical resonators incorporating various emitters—such as unstrained GaAs quantum dots, mesoscopic structures, InAs quantum dots (via flashing technique and Stranski–Krastanov growth), and 2D materials.
The project has a position for a master’s student, and we are looking for candidates.
