Direct observation of large-area strain propagation on free-standing nanomembranes Investigations on epitaxial nanostructures with size of tens of nanometers have been a challenging issue for techniques that present high strain sensitivity but restricted spatial resolution. This is the case of recently developed x-ray nanoprobe techniques. Despite its inherent nondestructive character, submicron x-ray spots have only …
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Artigo em destaque
Sorry, this entry is only available in Brazilian Portuguese. For the sake of viewer convenience, the content is shown below in the alternative language. You may click the link to switch the active language. Artigo de membros do grupo foi escolhido pelo SPBMat como artigo em destaque. Veja aqui o texto em português.
New article by group member
Strain-based band structure engineering is a powerful tool to tune the optical and electronic properties of semiconductor nanostructures. We show that we can tune the band structure of InGaAs semiconductor quantum wells and modify the helicity of the emitted light by integrating them into rolled-up heterostructures and changing their geometrical configuration. Experimental results from photoluminescence …
Presentation of PIBIC project – Pedro Carneiro
For the annual PIBIC congress, Pedro made a video poster of his work: “Desenvolvimento de um experimento de quantificação da concentração de elementos por fluorescência de raios X e aplicação para o estudo de modelos de epilepsia em roedores”.
Presentation of PIBIC project – Gabriel Gomes
For the annual PIBIC congress, Gabriel made a video poster of his work “Fabricação e caracterização de membranas baseadas em nanoestruturas semicondutoras”.
New article by group member: Band structure engineering in strain-free GaAs mesoscopic structures
We investigate the optical properties of strain-free mesoscopic GaAs/Al(x)Ga(1-x)As structures (MGS) coupled to thin GaAs/A(x)Ga(1-x)As quantum wells (QWs) with varying Al content (x). We demonstrate that quenching the QW emission by controlling the band crossover between AlGaAs X-point and GaAs Gamma-point gives rise to long carrier lifetimes and enhanced optical emission from the MGS. For …