1. | Kunttal Keyshar Yongji Gong, Gonglan Ye Gustavo Brunetto Wu Zhou Daniel Cole Ken Hackenberg Yongmin He Leonardo Machado Mohamad Kabbani Amelia Hart Bo Li Douglas Galvao Antony George Robert Vajtai Chandra Sekhar Tiwary Pulickel Ajayan P H C S M: Chemical Vapor Deposition of Monolayer Rhenium Disulfide (ReS2). In: Advanced Materials, 27 (31), pp. 4640–4648, 2015. (Type: Journal Article | Abstract | Links | BibTeX) @article{Keyshar2015, title = {Chemical Vapor Deposition of Monolayer Rhenium Disulfide (ReS2)}, author = {Kunttal Keyshar , Yongji Gong , Gonglan Ye , Gustavo Brunetto , Wu Zhou , Daniel P. Cole , Ken Hackenberg , Yongmin He , Leonardo Machado , Mohamad Kabbani , Amelia H. C. Hart , Bo Li , Douglas S. Galvao , Antony George , Robert Vajtai , Chandra Sekhar Tiwary , Pulickel M. Ajayan}, url = {http://onlinelibrary.wiley.com/doi/10.1002/adma.201501795/full}, doi = {10.1002/adma.201501795}, year = {2015}, date = {2015-07-03}, journal = {Advanced Materials}, volume = {27}, number = {31}, pages = {4640–4648}, abstract = {The direct synthesis of monolayer and multilayer ReS2 by chemical vapor deposition at a low temperature of 450 °C is reported. Detailed characterization of this material is performed using various spectroscopy and microscopy methods. Furthermore initial field-effect transistor characteristics are evaluated, which highlight the potential in being used as an n-type semiconductor.}, keywords = {}, pubstate = {published}, tppubtype = {article} } The direct synthesis of monolayer and multilayer ReS2 by chemical vapor deposition at a low temperature of 450 °C is reported. Detailed characterization of this material is performed using various spectroscopy and microscopy methods. Furthermore initial field-effect transistor characteristics are evaluated, which highlight the potential in being used as an n-type semiconductor. |
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1. | ![]() | Kunttal Keyshar Yongji Gong, Gonglan Ye Gustavo Brunetto Wu Zhou Daniel Cole Ken Hackenberg Yongmin He Leonardo Machado Mohamad Kabbani Amelia Hart Bo Li Douglas Galvao Antony George Robert Vajtai Chandra Sekhar Tiwary Pulickel Ajayan P H C S M Chemical Vapor Deposition of Monolayer Rhenium Disulfide (ReS2) Journal Article Advanced Materials, 27 (31), pp. 4640–4648, 2015. Abstract | Links | BibTeX | Tags: Electronic Structure, Rhenium Disulfide, Synthesis @article{Keyshar2015, title = {Chemical Vapor Deposition of Monolayer Rhenium Disulfide (ReS2)}, author = {Kunttal Keyshar , Yongji Gong , Gonglan Ye , Gustavo Brunetto , Wu Zhou , Daniel P. Cole , Ken Hackenberg , Yongmin He , Leonardo Machado , Mohamad Kabbani , Amelia H. C. Hart , Bo Li , Douglas S. Galvao , Antony George , Robert Vajtai , Chandra Sekhar Tiwary , Pulickel M. Ajayan}, url = {http://onlinelibrary.wiley.com/doi/10.1002/adma.201501795/full}, doi = {10.1002/adma.201501795}, year = {2015}, date = {2015-07-03}, journal = {Advanced Materials}, volume = {27}, number = {31}, pages = {4640–4648}, abstract = {The direct synthesis of monolayer and multilayer ReS2 by chemical vapor deposition at a low temperature of 450 °C is reported. Detailed characterization of this material is performed using various spectroscopy and microscopy methods. Furthermore initial field-effect transistor characteristics are evaluated, which highlight the potential in being used as an n-type semiconductor.}, keywords = {Electronic Structure, Rhenium Disulfide, Synthesis}, pubstate = {published}, tppubtype = {article} } The direct synthesis of monolayer and multilayer ReS2 by chemical vapor deposition at a low temperature of 450 °C is reported. Detailed characterization of this material is performed using various spectroscopy and microscopy methods. Furthermore initial field-effect transistor characteristics are evaluated, which highlight the potential in being used as an n-type semiconductor. |
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