1.
Yongji Gong Kunttal Keyshar, Gonglan Ye
Chemical Vapor Deposition of Monolayer Rhenium Disulfide (ReS2) Journal Article
In: Advanced Materials, vol. 27, no. 31, pp. 4640–4648, 2015.
@article{Keyshar2015,
title = {Chemical Vapor Deposition of Monolayer Rhenium Disulfide (ReS2)},
author = {Kunttal Keyshar , Yongji Gong , Gonglan Ye , Gustavo Brunetto , Wu Zhou ,
Daniel P. Cole , Ken Hackenberg , Yongmin He , Leonardo Machado , Mohamad Kabbani ,
Amelia H. C. Hart , Bo Li , Douglas S. Galvao , Antony George , Robert Vajtai ,
Chandra Sekhar Tiwary , Pulickel M. Ajayan},
url = {http://onlinelibrary.wiley.com/doi/10.1002/adma.201501795/full},
doi = {10.1002/adma.201501795},
year = {2015},
date = {2015-07-03},
journal = {Advanced Materials},
volume = {27},
number = {31},
pages = {4640–4648},
abstract = {The direct synthesis of monolayer and multilayer ReS2 by chemical vapor deposition at a low temperature of 450 °C is reported. Detailed characterization of this material is performed using various spectroscopy and microscopy methods. Furthermore initial field-effect transistor characteristics are evaluated, which highlight the potential in being used as an n-type semiconductor.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
The direct synthesis of monolayer and multilayer ReS2 by chemical vapor deposition at a low temperature of 450 °C is reported. Detailed characterization of this material is performed using various spectroscopy and microscopy methods. Furthermore initial field-effect transistor characteristics are evaluated, which highlight the potential in being used as an n-type semiconductor.
2015
1.
Yongji Gong Kunttal Keyshar, Gonglan Ye
Chemical Vapor Deposition of Monolayer Rhenium Disulfide (ReS2) Journal Article
In: Advanced Materials, vol. 27, no. 31, pp. 4640–4648, 2015.
Abstract | Links | BibTeX | Tags: Electronic Structure, Rhenium Disulfide, Synthesis
@article{Keyshar2015,
title = {Chemical Vapor Deposition of Monolayer Rhenium Disulfide (ReS2)},
author = {Kunttal Keyshar , Yongji Gong , Gonglan Ye , Gustavo Brunetto , Wu Zhou ,
Daniel P. Cole , Ken Hackenberg , Yongmin He , Leonardo Machado , Mohamad Kabbani ,
Amelia H. C. Hart , Bo Li , Douglas S. Galvao , Antony George , Robert Vajtai ,
Chandra Sekhar Tiwary , Pulickel M. Ajayan},
url = {http://onlinelibrary.wiley.com/doi/10.1002/adma.201501795/full},
doi = {10.1002/adma.201501795},
year = {2015},
date = {2015-07-03},
journal = {Advanced Materials},
volume = {27},
number = {31},
pages = {4640–4648},
abstract = {The direct synthesis of monolayer and multilayer ReS2 by chemical vapor deposition at a low temperature of 450 °C is reported. Detailed characterization of this material is performed using various spectroscopy and microscopy methods. Furthermore initial field-effect transistor characteristics are evaluated, which highlight the potential in being used as an n-type semiconductor.},
keywords = {Electronic Structure, Rhenium Disulfide, Synthesis},
pubstate = {published},
tppubtype = {article}
}
The direct synthesis of monolayer and multilayer ReS2 by chemical vapor deposition at a low temperature of 450 °C is reported. Detailed characterization of this material is performed using various spectroscopy and microscopy methods. Furthermore initial field-effect transistor characteristics are evaluated, which highlight the potential in being used as an n-type semiconductor.
http://scholar.google.com/citations?hl=en&user=95SvbM8AAAAJ
