1.
Anna Kremen Nitzan Shadmi, Yiftach Frenkel; Joselevich, Ernesto
Defect-Free Carbon Nanotube Coils Journal Article
In: Nano Letters, vol. 16, no. 4, pp. 2152–2158, 2016.
@article{Shadmi2016,
title = {Defect-Free Carbon Nanotube Coils},
author = {Nitzan Shadmi, Anna Kremen, Yiftach Frenkel, Zachary J. Lapin, Leonardo D. Machado, Sergio B. Legoas, Ora Bitton, Katya Rechav, Ronit Popovitz-Biro, Douglas S. Galvão, Ado Jorio, Lukas Novotny, Beena Kalisky, and Ernesto Joselevich},
url = {http://pubs.acs.org/doi/abs/10.1021/acs.nanolett.5b03417},
doi = {10.1021/acs.nanolett.5b03417},
year = {2016},
date = {2016-04-01},
journal = {Nano Letters},
volume = {16},
number = {4},
pages = {2152–2158},
abstract = {Carbon nanotubes are promising building blocks for various nanoelectronic components. A highly desirable geometry for such applications is a coil. However, coiled nanotube structures reported so far were inherently defective or had no free ends accessible for contacting. Here we demonstrate the spontaneous self-coiling of single-wall carbon nanotubes into defect-free coils of up to more than 70 turns with identical diameter and chirality, and free ends. We characterize the structure, formation mechanism, and electrical properties of these coils by different microscopies, molecular dynamics simulations, Raman spectroscopy, and electrical and magnetic measurements. The coils are highly conductive, as expected for defect-free carbon nanotubes, but adjacent nanotube segments in the coil are more highly coupled than in regular bundles of single-wall carbon nanotubes, owing to their perfect crystal momentum matching, which enables tunneling between the turns. Although this behavior does not yet enable the performance of these nanotube coils as inductive devices, it does point a clear path for their realization. Hence, this study represents a major step toward the production of many different nanotube coil devices, including inductors, electromagnets, transformers, and dynamos.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Carbon nanotubes are promising building blocks for various nanoelectronic components. A highly desirable geometry for such applications is a coil. However, coiled nanotube structures reported so far were inherently defective or had no free ends accessible for contacting. Here we demonstrate the spontaneous self-coiling of single-wall carbon nanotubes into defect-free coils of up to more than 70 turns with identical diameter and chirality, and free ends. We characterize the structure, formation mechanism, and electrical properties of these coils by different microscopies, molecular dynamics simulations, Raman spectroscopy, and electrical and magnetic measurements. The coils are highly conductive, as expected for defect-free carbon nanotubes, but adjacent nanotube segments in the coil are more highly coupled than in regular bundles of single-wall carbon nanotubes, owing to their perfect crystal momentum matching, which enables tunneling between the turns. Although this behavior does not yet enable the performance of these nanotube coils as inductive devices, it does point a clear path for their realization. Hence, this study represents a major step toward the production of many different nanotube coil devices, including inductors, electromagnets, transformers, and dynamos.
2.
Xifan Wang Sidong Lei, Bo Li
Surface functionalization of two-dimensional metal chalcogenides by Lewis acid–base chemistry Journal Article
In: Nature Nanotechnology, vol. 11, pp. 465–471, 2016.
@article{Lei2016,
title = {Surface functionalization of two-dimensional metal chalcogenides by Lewis acid–base chemistry},
author = {Sidong Lei, Xifan Wang, Bo Li, Jiahao Kang, Yongmin He, Antony George, Liehui Ge, Yongji Gong, Pei Dong, Zehua Jin, Gustavo Brunetto, Weibing Chen, Zuan-Tao Lin, Robert Baines, Douglas S. Galvão, Jun Lou, Enrique Barrera, Kaustav Banerjee, Robert Vajtai & Pulickel Ajayan},
url = {http://www.nature.com/nnano/journal/vaop/ncurrent/full/nnano.2015.323.html},
doi = {10.1038/nnano.2015.323},
year = {2016},
date = {2016-02-01},
journal = {Nature Nanotechnology},
volume = {11},
pages = {465–471},
abstract = {Precise control of the electronic surface states of two-dimensional (2D) materials could improve their versatility and widen their applicability in electronics and sensing. To this end, chemical surface functionalization has been used to adjust the electronic properties of 2D materials. So far, however, chemical functionalization has relied on lattice defects and physisorption methods that inevitably modify the topological characteristics of the atomic layers. Here we make use of the lone pair electrons found in most of 2D metal chalcogenides and report a functionalization method via a Lewis acid–base reaction that does not alter the host structure. Atomic layers of n-type InSe react with Ti4+ to form planar p-type [Ti4+n(InSe)] coordination complexes. Using this strategy, we fabricate planar p–n junctions on 2D InSe with improved rectification and photovoltaic properties, without requiring heterostructure growth procedures or device fabrication processes. We also show that this functionalization approach works with other Lewis acids (such as B3+, Al3+ and Sn4+) and can be applied to other 2D materials (for example MoS2, MoSe2). Finally, we show that it is possible to use Lewis acid–base chemistry as a bridge to connect molecules to 2D atomic layers and fabricate a proof-of-principle dye-sensitized photosensing device.
},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Precise control of the electronic surface states of two-dimensional (2D) materials could improve their versatility and widen their applicability in electronics and sensing. To this end, chemical surface functionalization has been used to adjust the electronic properties of 2D materials. So far, however, chemical functionalization has relied on lattice defects and physisorption methods that inevitably modify the topological characteristics of the atomic layers. Here we make use of the lone pair electrons found in most of 2D metal chalcogenides and report a functionalization method via a Lewis acid–base reaction that does not alter the host structure. Atomic layers of n-type InSe react with Ti4+ to form planar p-type [Ti4+n(InSe)] coordination complexes. Using this strategy, we fabricate planar p–n junctions on 2D InSe with improved rectification and photovoltaic properties, without requiring heterostructure growth procedures or device fabrication processes. We also show that this functionalization approach works with other Lewis acids (such as B3+, Al3+ and Sn4+) and can be applied to other 2D materials (for example MoS2, MoSe2). Finally, we show that it is possible to use Lewis acid–base chemistry as a bridge to connect molecules to 2D atomic layers and fabricate a proof-of-principle dye-sensitized photosensing device.
3.
Yongji Gong Kunttal Keyshar, Gonglan Ye
Chemical Vapor Deposition of Monolayer Rhenium Disulfide (ReS2) Journal Article
In: Advanced Materials, vol. 27, no. 31, pp. 4640–4648, 2015.
@article{Keyshar2015,
title = {Chemical Vapor Deposition of Monolayer Rhenium Disulfide (ReS2)},
author = {Kunttal Keyshar , Yongji Gong , Gonglan Ye , Gustavo Brunetto , Wu Zhou ,
Daniel P. Cole , Ken Hackenberg , Yongmin He , Leonardo Machado , Mohamad Kabbani ,
Amelia H. C. Hart , Bo Li , Douglas S. Galvao , Antony George , Robert Vajtai ,
Chandra Sekhar Tiwary , Pulickel M. Ajayan},
url = {http://onlinelibrary.wiley.com/doi/10.1002/adma.201501795/full},
doi = {10.1002/adma.201501795},
year = {2015},
date = {2015-07-03},
journal = {Advanced Materials},
volume = {27},
number = {31},
pages = {4640–4648},
abstract = {The direct synthesis of monolayer and multilayer ReS2 by chemical vapor deposition at a low temperature of 450 °C is reported. Detailed characterization of this material is performed using various spectroscopy and microscopy methods. Furthermore initial field-effect transistor characteristics are evaluated, which highlight the potential in being used as an n-type semiconductor.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
The direct synthesis of monolayer and multilayer ReS2 by chemical vapor deposition at a low temperature of 450 °C is reported. Detailed characterization of this material is performed using various spectroscopy and microscopy methods. Furthermore initial field-effect transistor characteristics are evaluated, which highlight the potential in being used as an n-type semiconductor.
2016
3.
Anna Kremen Nitzan Shadmi, Yiftach Frenkel; Joselevich, Ernesto
Defect-Free Carbon Nanotube Coils Journal Article
In: Nano Letters, vol. 16, no. 4, pp. 2152–2158, 2016.
Abstract | Links | BibTeX | Tags: CNT, Coils, Molecular Dynamics, Synthesis, TEM
@article{Shadmi2016,
title = {Defect-Free Carbon Nanotube Coils},
author = {Nitzan Shadmi, Anna Kremen, Yiftach Frenkel, Zachary J. Lapin, Leonardo D. Machado, Sergio B. Legoas, Ora Bitton, Katya Rechav, Ronit Popovitz-Biro, Douglas S. Galvão, Ado Jorio, Lukas Novotny, Beena Kalisky, and Ernesto Joselevich},
url = {http://pubs.acs.org/doi/abs/10.1021/acs.nanolett.5b03417},
doi = {10.1021/acs.nanolett.5b03417},
year = {2016},
date = {2016-04-01},
journal = {Nano Letters},
volume = {16},
number = {4},
pages = {2152–2158},
abstract = {Carbon nanotubes are promising building blocks for various nanoelectronic components. A highly desirable geometry for such applications is a coil. However, coiled nanotube structures reported so far were inherently defective or had no free ends accessible for contacting. Here we demonstrate the spontaneous self-coiling of single-wall carbon nanotubes into defect-free coils of up to more than 70 turns with identical diameter and chirality, and free ends. We characterize the structure, formation mechanism, and electrical properties of these coils by different microscopies, molecular dynamics simulations, Raman spectroscopy, and electrical and magnetic measurements. The coils are highly conductive, as expected for defect-free carbon nanotubes, but adjacent nanotube segments in the coil are more highly coupled than in regular bundles of single-wall carbon nanotubes, owing to their perfect crystal momentum matching, which enables tunneling between the turns. Although this behavior does not yet enable the performance of these nanotube coils as inductive devices, it does point a clear path for their realization. Hence, this study represents a major step toward the production of many different nanotube coil devices, including inductors, electromagnets, transformers, and dynamos.},
keywords = {CNT, Coils, Molecular Dynamics, Synthesis, TEM},
pubstate = {published},
tppubtype = {article}
}
Carbon nanotubes are promising building blocks for various nanoelectronic components. A highly desirable geometry for such applications is a coil. However, coiled nanotube structures reported so far were inherently defective or had no free ends accessible for contacting. Here we demonstrate the spontaneous self-coiling of single-wall carbon nanotubes into defect-free coils of up to more than 70 turns with identical diameter and chirality, and free ends. We characterize the structure, formation mechanism, and electrical properties of these coils by different microscopies, molecular dynamics simulations, Raman spectroscopy, and electrical and magnetic measurements. The coils are highly conductive, as expected for defect-free carbon nanotubes, but adjacent nanotube segments in the coil are more highly coupled than in regular bundles of single-wall carbon nanotubes, owing to their perfect crystal momentum matching, which enables tunneling between the turns. Although this behavior does not yet enable the performance of these nanotube coils as inductive devices, it does point a clear path for their realization. Hence, this study represents a major step toward the production of many different nanotube coil devices, including inductors, electromagnets, transformers, and dynamos.
2.
Xifan Wang Sidong Lei, Bo Li
Surface functionalization of two-dimensional metal chalcogenides by Lewis acid–base chemistry Journal Article
In: Nature Nanotechnology, vol. 11, pp. 465–471, 2016.
Abstract | Links | BibTeX | Tags: Chalcogenides, Modelling, Synthesis, top20
@article{Lei2016,
title = {Surface functionalization of two-dimensional metal chalcogenides by Lewis acid–base chemistry},
author = {Sidong Lei, Xifan Wang, Bo Li, Jiahao Kang, Yongmin He, Antony George, Liehui Ge, Yongji Gong, Pei Dong, Zehua Jin, Gustavo Brunetto, Weibing Chen, Zuan-Tao Lin, Robert Baines, Douglas S. Galvão, Jun Lou, Enrique Barrera, Kaustav Banerjee, Robert Vajtai & Pulickel Ajayan},
url = {http://www.nature.com/nnano/journal/vaop/ncurrent/full/nnano.2015.323.html},
doi = {10.1038/nnano.2015.323},
year = {2016},
date = {2016-02-01},
journal = {Nature Nanotechnology},
volume = {11},
pages = {465–471},
abstract = {Precise control of the electronic surface states of two-dimensional (2D) materials could improve their versatility and widen their applicability in electronics and sensing. To this end, chemical surface functionalization has been used to adjust the electronic properties of 2D materials. So far, however, chemical functionalization has relied on lattice defects and physisorption methods that inevitably modify the topological characteristics of the atomic layers. Here we make use of the lone pair electrons found in most of 2D metal chalcogenides and report a functionalization method via a Lewis acid–base reaction that does not alter the host structure. Atomic layers of n-type InSe react with Ti4+ to form planar p-type [Ti4+n(InSe)] coordination complexes. Using this strategy, we fabricate planar p–n junctions on 2D InSe with improved rectification and photovoltaic properties, without requiring heterostructure growth procedures or device fabrication processes. We also show that this functionalization approach works with other Lewis acids (such as B3+, Al3+ and Sn4+) and can be applied to other 2D materials (for example MoS2, MoSe2). Finally, we show that it is possible to use Lewis acid–base chemistry as a bridge to connect molecules to 2D atomic layers and fabricate a proof-of-principle dye-sensitized photosensing device.
},
keywords = {Chalcogenides, Modelling, Synthesis, top20},
pubstate = {published},
tppubtype = {article}
}
Precise control of the electronic surface states of two-dimensional (2D) materials could improve their versatility and widen their applicability in electronics and sensing. To this end, chemical surface functionalization has been used to adjust the electronic properties of 2D materials. So far, however, chemical functionalization has relied on lattice defects and physisorption methods that inevitably modify the topological characteristics of the atomic layers. Here we make use of the lone pair electrons found in most of 2D metal chalcogenides and report a functionalization method via a Lewis acid–base reaction that does not alter the host structure. Atomic layers of n-type InSe react with Ti4+ to form planar p-type [Ti4+n(InSe)] coordination complexes. Using this strategy, we fabricate planar p–n junctions on 2D InSe with improved rectification and photovoltaic properties, without requiring heterostructure growth procedures or device fabrication processes. We also show that this functionalization approach works with other Lewis acids (such as B3+, Al3+ and Sn4+) and can be applied to other 2D materials (for example MoS2, MoSe2). Finally, we show that it is possible to use Lewis acid–base chemistry as a bridge to connect molecules to 2D atomic layers and fabricate a proof-of-principle dye-sensitized photosensing device.
2015
1.
Yongji Gong Kunttal Keyshar, Gonglan Ye
Chemical Vapor Deposition of Monolayer Rhenium Disulfide (ReS2) Journal Article
In: Advanced Materials, vol. 27, no. 31, pp. 4640–4648, 2015.
Abstract | Links | BibTeX | Tags: Electronic Structure, Rhenium Disulfide, Synthesis
@article{Keyshar2015,
title = {Chemical Vapor Deposition of Monolayer Rhenium Disulfide (ReS2)},
author = {Kunttal Keyshar , Yongji Gong , Gonglan Ye , Gustavo Brunetto , Wu Zhou ,
Daniel P. Cole , Ken Hackenberg , Yongmin He , Leonardo Machado , Mohamad Kabbani ,
Amelia H. C. Hart , Bo Li , Douglas S. Galvao , Antony George , Robert Vajtai ,
Chandra Sekhar Tiwary , Pulickel M. Ajayan},
url = {http://onlinelibrary.wiley.com/doi/10.1002/adma.201501795/full},
doi = {10.1002/adma.201501795},
year = {2015},
date = {2015-07-03},
journal = {Advanced Materials},
volume = {27},
number = {31},
pages = {4640–4648},
abstract = {The direct synthesis of monolayer and multilayer ReS2 by chemical vapor deposition at a low temperature of 450 °C is reported. Detailed characterization of this material is performed using various spectroscopy and microscopy methods. Furthermore initial field-effect transistor characteristics are evaluated, which highlight the potential in being used as an n-type semiconductor.},
keywords = {Electronic Structure, Rhenium Disulfide, Synthesis},
pubstate = {published},
tppubtype = {article}
}
The direct synthesis of monolayer and multilayer ReS2 by chemical vapor deposition at a low temperature of 450 °C is reported. Detailed characterization of this material is performed using various spectroscopy and microscopy methods. Furthermore initial field-effect transistor characteristics are evaluated, which highlight the potential in being used as an n-type semiconductor.
http://scholar.google.com/citations?hl=en&user=95SvbM8AAAAJ
