Abstract
Miniaturized integrated spectrometers will have unprecedented impact on
applications ranging from unmanned aerial vehicles to mobile phones, and
silicon photonics promises to deliver compact, cost-effective devices.
Mirroring its ubiquitous free-space counterpart, a silicon
photonics-based Fourier transform spectrometer (Si-FTS) can bring
broadband operation and fine resolution to the chip scale. Here we
present the modeling and experimental demonstration of a thermally tuned
Si-FTS accounting for dispersion, thermo-optic non-linearity, and
thermal expansion. We show how these effects modify the relation between
the spectrum and interferogram of a light source and we develop a
quantitative correction procedure through calibration with a tunable
laser. We retrieve a broadband spectrum (7 THz around 193.4 THz with
0.38-THz resolution consuming 2.5W per heater) and demonstrate the
Si-FTS resilience to fabrication variations - a major advantage for
large-scale manufacturing. Providing design flexibility and robustness,
the Si-FTS is poised to become a fundamental building block for on-chip
spectroscopy.
Links
BibTeX (Download)
@article{Souza2018,
title = {Fourier transform spectrometer on silicon with thermo-optic non-linearity and dispersion correction},
author = {Mario C M M Souza and Andrew Grieco and Newton C Frateschi and Yeshaiahu Fainman},
url = {https://doi.org/10.1038/s41467-018-03004-6},
doi = {10.1038/s41467-018-03004-6},
issn = {2041-1723},
year = {2018},
date = {2018-02-01},
journal = {NATURE COMMUNICATIONS},
volume = {9},
publisher = {NATURE PUBLISHING GROUP},
address = {MACMILLAN BUILDING, 4 CRINAN ST, LONDON N1 9XW, ENGLAND},
abstract = {Miniaturized integrated spectrometers will have unprecedented impact on
applications ranging from unmanned aerial vehicles to mobile phones, and
silicon photonics promises to deliver compact, cost-effective devices.
Mirroring its ubiquitous free-space counterpart, a silicon
photonics-based Fourier transform spectrometer (Si-FTS) can bring
broadband operation and fine resolution to the chip scale. Here we
present the modeling and experimental demonstration of a thermally tuned
Si-FTS accounting for dispersion, thermo-optic non-linearity, and
thermal expansion. We show how these effects modify the relation between
the spectrum and interferogram of a light source and we develop a
quantitative correction procedure through calibration with a tunable
laser. We retrieve a broadband spectrum (7 THz around 193.4 THz with
0.38-THz resolution consuming 2.5W per heater) and demonstrate the
Si-FTS resilience to fabrication variations - a major advantage for
large-scale manufacturing. Providing design flexibility and robustness,
the Si-FTS is poised to become a fundamental building block for on-chip
spectroscopy.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}