Publications

@article{safavi-naeini_optomechanics_2010,

title = {Optomechanics in an ultrahigh-Q two-dimensional photonic crystal cavity},

author = {Safavi-Naeini, Amir H. and Alegre, Thiago P. Mayer and Winger, Martin and Painter, Oskar},

url = {http://scitation.aip.org/content/aip/journal/apl/97/18/10.1063/1.3507288},

issn = {0003-6951, 1077-3118},

year  = {2010},

date = {2010-01-01},

urldate = {2014-05-14},

journal = {Applied Physics Letters},

volume = {97},

number = {18},

pages = {181106},

abstract = {We demonstrate an ultrahigh- Q slotted two-dimensional photonic crystalcavity capable of obtaining strong interaction between the internal light field and the mechanical motion of the slotted structure. The measured optical quality factor is Q = 1.2 × 10 6 for a cavity with an effective modal volume of V eff = 0.04 ( λ ) 3 . Optical transduction of the thermal motion of the fundamental in-plane mechanical resonance of the structure ( ν m = 151 MHz ) is performed, from which a zero-point motion optomechanical coupling rate of g ∗ / 2 π = 320 kHz is inferred. Dynamical back-action of the optical field on the mechanical motion, resulting in cooling and amplication of the mechanical motion, is also demonstrated.},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{mialichi_resonance_2010,

title = {Resonance Modes in InAs/InGaAlAs/InP Quantum Dot Microdisk Resonators},

author = {Mialichi, Jose R. and Barea, Luis Alberto M. and Souza, Patricia L. De and Kawabata, Rudy Massami S. and Pires, Mauricio P. and Frateschi, Newton C.},

url = {http://ecst.ecsdl.org/content/31/1/289},

issn = {1938-6737, 1938-5862},

year  = {2010},

date = {2010-01-01},

urldate = {2014-05-14},

journal = {ECS Transactions},

volume = {31},

number = {1},

pages = {289--293},

abstract = {The authors report on the development of quantum dot microdisk resonators grown by metal-organic chemical vapor deposition. Two stacked layers of InAs quantum dots embedded in a lattice-matched InGaAlAs (λg=1.47 μm) are grown on (100) InP substrate. A new approach for the fabrication of active microdisk resonators is developed using focused-ion beam (FIB) followed by selective wet-chemical etching. Electrical and optical characterization of the resonator is presented. Emission in the C-band at whispering-gallery modes is observed.},

keywords = {},

pubstate = {published},

tppubtype = {article}

}

@article{mialichi_shorter_2010,

title = {Shorter wavelength emission with InAs quantum dots growth directly on large bandgap quaternary (In0.68Ga0.32As0.7P0.3) barriers for high current injection efficiency},

author = {Mialichi, J. R. and Frateschi, N. C.},

url = {http://www.sciencedirect.com/science/article/pii/S0022024810003003},

issn = {0022-0248},

year  = {2010},

date = {2010-01-01},

urldate = {2014-05-14},

journal = {Journal of Crystal Growth},

volume = {312},

number = {15},

pages = {2279--2283},

abstract = {We present the growth of stacked layers of InAs quantum dots directly on high bandgap In0.68Ga0.32As0.7P0.3 (λg=1420 nm) barriers. The quaternary material is lattice matched to InP forming a double hetero-structure. Indium flux, number of InAs stacked layers and InGaAsP inner separation layer thickness were investigated. Photoluminescence (PL) and atomic force microscopy (AFM) analysis indicate the occurrence of gallium diffusion and the arsenic/phosphorus (As/P) exchange with the InGaAsP barriers. As a result, shorter wavelength emission is observed, making the structures suitable for telecom applications.},

keywords = {},

pubstate = {published},

tppubtype = {article}

}