GaAs nanowires go brighter


Semiconductor nanowires have been extensively investigated in the last few years due to their new physical properties and enormous perspectives for applications. In this work, we investigate the effects of GaAsP passivation on strained GaAs core-shell nanowires. We demonstrate that, as a result of the decrease of the density of surface states, 4 orders of magnitude more intense photoluminescense (as compared to unpassivated structures) can be achived. For more details click HERE.